IGC109T120T6RM - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: IGC109T120T6RM
Тип транзистора: IGBT
Тип управляющего канала: N
Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 1200
Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20
Максимальный постоянный ток коллектора |Ic| @25℃, A: 110
Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.8
Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 6.5
Максимальная температура перехода (Tj), ℃: 175
Емкость коллектора типовая (Cc), pf: 440
Тип корпуса: CHIP
Аналог (замена) для IGC109T120T6RM
IGC109T120T6RM Datasheet (PDF)
igc109t120t6rm.pdf
IGC109T120T6RM IGBT4 Medium Power Chip Features: 1200V Trench + Field stop technology This chip is used for:C low switching losses medium power modules soft turn off positive temperature coefficient Applications: easy paralleling G medium power drives E Chip Type VCE ICn Die Size Package IGC109T120T6RM 1200V 110A 7.48 x 14.61 mm2 sawn on f
igc109t120t6rl.pdf
IGC109T120T6RL IGBT4 Low Power Chip Features: 1200V Trench + Field stop technology This chip is used for:C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications: G low / medium power drives E Chip Type VCE ICn Die Size Package IGC109T120T6RL 1200V 110A 7.48 x 14.61 mm2 sawn on foil MECHA
igc109t120t6rh.pdf
IGC109T120T6RH IGBT4 High Power Chip Features: 1200V Trench + Field stop technology This chip is used for:C low V medium / high power modules CE(sat) soft turn off positive temperature coefficient Applications: easy paralleling G medium / high power drives E Chip Type VCE ICn Die Size Package IGC109T120T6RH 1200V 110A 7.48 x 14.61 mm2 saw
sigc109t120r3le.pdf
SIGC109T120R3LE IGBT3 Power Chip Features: This chip is used for: 1200V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications: positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package SIGC109T120R3LE 1200V 100A 10.47 x 10.44 mm2 sawn on foil Mechanical Param
sigc109t120r3l.pdf
SIGC109T120R3LE IGBT3 Chip Features: This chip is used for: 1200V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications: positive temperature coefficient drives easy parallelingG E Chip Type VCE IC Die Size PackageSIGC109T120R3LE 1200V 100A 10.47 x 10.44 mm2 sawn on foil Mechanical Parameters R
sigc109t120r3e.pdf
SIGC109T120R3E IGBT3 Power Chip Features: This chip is used for: 1200V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications: positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package SIGC109T120R3E 1200V 100A 10.47 x 10.44 mm2 sawn on foil Mechanical Paramet
Другие IGBT... IGC04R60DE , IGC05R60D , IGC05R60DE , IGC06R60D , IGC11T120T8L , IGC100T65T8RM , IGC109T120T6RH , IGC109T120T6RL , IRG4PC50UD , IGC10R60D , IGC10R60DE , IGC10T65QE , IGC114T170S8RH , IGC114T170S8RM , IGC11T120T6L , APT33GF120LRD , IGC189T120T8RL .
Список транзисторов
Обновления
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ