Справочник IGBT. IGC109T120T6RM

 

IGC109T120T6RM Даташит. Аналоги. Параметры и характеристики.


   Наименование: IGC109T120T6RM
   Тип транзистора: IGBT
   Тип управляющего канала: N
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 110 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.8 V @25℃
   Tjⓘ - Максимальная температура перехода: 175 ℃
   Coesⓘ - Выходная емкость, типовая: 440 pF
   Тип корпуса: CHIP
     - подбор IGBT транзистора по параметрам

 

IGC109T120T6RM Datasheet (PDF)

 ..1. Size:71K  infineon
igc109t120t6rm.pdfpdf_icon

IGC109T120T6RM

IGC109T120T6RM IGBT4 Medium Power Chip Features: 1200V Trench + Field stop technology This chip is used for:C low switching losses medium power modules soft turn off positive temperature coefficient Applications: easy paralleling G medium power drives E Chip Type VCE ICn Die Size Package IGC109T120T6RM 1200V 110A 7.48 x 14.61 mm2 sawn on f

 1.1. Size:72K  infineon
igc109t120t6rl.pdfpdf_icon

IGC109T120T6RM

IGC109T120T6RL IGBT4 Low Power Chip Features: 1200V Trench + Field stop technology This chip is used for:C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications: G low / medium power drives E Chip Type VCE ICn Die Size Package IGC109T120T6RL 1200V 110A 7.48 x 14.61 mm2 sawn on foil MECHA

 1.2. Size:74K  infineon
igc109t120t6rh.pdfpdf_icon

IGC109T120T6RM

IGC109T120T6RH IGBT4 High Power Chip Features: 1200V Trench + Field stop technology This chip is used for:C low V medium / high power modules CE(sat) soft turn off positive temperature coefficient Applications: easy paralleling G medium / high power drives E Chip Type VCE ICn Die Size Package IGC109T120T6RH 1200V 110A 7.48 x 14.61 mm2 saw

 4.1. Size:235K  infineon
sigc109t120r3le.pdfpdf_icon

IGC109T120T6RM

SIGC109T120R3LE IGBT3 Power Chip Features: This chip is used for: 1200V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications: positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package SIGC109T120R3LE 1200V 100A 10.47 x 10.44 mm2 sawn on foil Mechanical Param

Другие IGBT... IGC04R60DE , IGC05R60D , IGC05R60DE , IGC06R60D , IGC11T120T8L , IGC100T65T8RM , IGC109T120T6RH , IGC109T120T6RL , RJH60F7BDPQ-A0 , IGC10R60D , IGC10R60DE , IGC10T65QE , IGC114T170S8RH , IGC114T170S8RM , IGC11T120T6L , APT33GF120LRD , IGC189T120T8RL .

History: IGC19T65QE | IGC36T120T8L | IGC10T65QE | IGC10R60D | DIM1200ASM45-TS001 | DF80R12W2H3_B11 | T1600GB45G

 

 
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