IGC109T120T6RM PDF and Equivalents Search

 

IGC109T120T6RM Specs and Replacement

Type Designator: IGC109T120T6RM

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 110 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

Coesⓘ - Output Capacitance, typ: 440 pF

Package: CHIP

 IGC109T120T6RM Substitution

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IGC109T120T6RM datasheet

 ..1. Size:71K  infineon
 igc109t120t6rm.pdf pdf_icon

IGC109T120T6RM

IGC109T120T6RM IGBT4 Medium Power Chip Features 1200V Trench + Field stop technology This chip is used for C low switching losses medium power modules soft turn off positive temperature coefficient Applications easy paralleling G medium power drives E Chip Type VCE ICn Die Size Package IGC109T120T6RM 1200V 110A 7.48 x 14.61 mm2 sawn on f... See More ⇒

 1.1. Size:72K  infineon
 igc109t120t6rl.pdf pdf_icon

IGC109T120T6RM

IGC109T120T6RL IGBT4 Low Power Chip Features 1200V Trench + Field stop technology This chip is used for C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications G low / medium power drives E Chip Type VCE ICn Die Size Package IGC109T120T6RL 1200V 110A 7.48 x 14.61 mm2 sawn on foil MECHA... See More ⇒

 1.2. Size:74K  infineon
 igc109t120t6rh.pdf pdf_icon

IGC109T120T6RM

IGC109T120T6RH IGBT4 High Power Chip Features 1200V Trench + Field stop technology This chip is used for C low V medium / high power modules CE(sat) soft turn off positive temperature coefficient Applications easy paralleling G medium / high power drives E Chip Type VCE ICn Die Size Package IGC109T120T6RH 1200V 110A 7.48 x 14.61 mm2 saw... See More ⇒

 4.1. Size:235K  infineon
 sigc109t120r3le.pdf pdf_icon

IGC109T120T6RM

SIGC109T120R3LE IGBT3 Power Chip Features This chip is used for 1200V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package SIGC109T120R3LE 1200V 100A 10.47 x 10.44 mm2 sawn on foil Mechanical Param... See More ⇒

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Specs: IGC04R60DE, IGC05R60D, IGC05R60DE, IGC06R60D, IGC11T120T8L, IGC100T65T8RM, IGC109T120T6RH, IGC109T120T6RL, IRGB20B60PD1, IGC10R60D, IGC10R60DE, IGC10T65QE, IGC114T170S8RH, IGC114T170S8RM, IGC11T120T6L, APT33GF120LRD, IGC189T120T8RL

Keywords - IGC109T120T6RM transistor spec

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