SGR20N40L - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SGR20N40L
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 45 W
|Vce|ⓘ - Tensión máxima colector-emisor: 400 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 6 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 8(max) V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 900 nS
Coesⓘ - Capacitancia de salida, typ: 60 pF
Paquete / Cubierta: DPAK
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SGR20N40L Datasheet (PDF)
sgr20n40l sgu20n40l.pdf
August 2001 IGBTSGR20N40L / SGU20N40LGeneral Description FeaturesInsulated Gate Bipolar Transistors (IGBTs) with a trench High input impedancegate structure provide superior conduction and switching High peak current capability (150A)performance in comparison with transistors having a planar Easy gate drivegate structure. They also have wide noise immunity. These
sgr20n40l.pdf
PreliminaryN-CHANNEL IGBT SGR20N40L / SGU20N40LD-PAK I-PAKFEATURES* High Input Impedance* High Peak Current Capability (150A)* Easy Gate DriveAPPLICATIONSC*Strobe FlashG EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacteristicsVCES 450 VCollector-Emitter VoltageVGES 6 VGate-Emitter VoltageICM (1) 150 APulsed Collector CurrentPC 45 WMaximum Power
Otros transistores... SGP20N60RUF , SGP23N60UF , SGP40N60UF , SGP5N60RUF , SGP5N60RUFD , SGP6N60UF , SGP6N60UFD , SGR15N40L , IKW30N60H3 , SGR2N60UFD , SGR5N60RUF , SGR6N60UF , SGS10N60RUF , SGS10N60RUFD , SGS13N60UF , SGS13N60UFD , SGS23N60UF .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2