All IGBT. SGR20N40L Datasheet

 

SGR20N40L Datasheet and Replacement


   Type Designator: SGR20N40L
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 45 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 6 V
   |Ic|ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 8(max) V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 1.4 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 900 nS
   Coesⓘ - Output Capacitance, typ: 60 pF
   Package: DPAK
      - IGBT Cross-Reference

 

SGR20N40L Datasheet (PDF)

 ..1. Size:186K  1
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SGR20N40L

August 2001 IGBTSGR20N40L / SGU20N40LGeneral Description FeaturesInsulated Gate Bipolar Transistors (IGBTs) with a trench High input impedancegate structure provide superior conduction and switching High peak current capability (150A)performance in comparison with transistors having a planar Easy gate drivegate structure. They also have wide noise immunity. These

 ..2. Size:174K  samsung
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SGR20N40L

PreliminaryN-CHANNEL IGBT SGR20N40L / SGU20N40LD-PAK I-PAKFEATURES* High Input Impedance* High Peak Current Capability (150A)* Easy Gate DriveAPPLICATIONSC*Strobe FlashG EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacteristicsVCES 450 VCollector-Emitter VoltageVGES 6 VGate-Emitter VoltageICM (1) 150 APulsed Collector CurrentPC 45 WMaximum Power

Datasheet: SGP20N60RUF , SGP23N60UF , SGP40N60UF , SGP5N60RUF , SGP5N60RUFD , SGP6N60UF , SGP6N60UFD , SGR15N40L , RJH3047 , SGR2N60UFD , SGR5N60RUF , SGR6N60UF , SGS10N60RUF , SGS10N60RUFD , SGS13N60UF , SGS13N60UFD , SGS23N60UF .

History: MGS05N60D | MGP7N60ED

Keywords - SGR20N40L transistor datasheet

 SGR20N40L cross reference
 SGR20N40L equivalent finder
 SGR20N40L lookup
 SGR20N40L substitution
 SGR20N40L replacement

 

 
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