SGR20N40L PDF and Equivalents Search

 

SGR20N40L Specs and Replacement

Type Designator: SGR20N40L

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 45 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 6 V

|Ic| ⓘ - Maximum Collector Current: 20 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 8(max) V @25℃

tr ⓘ - Rise Time, typ: 900 nS

Coesⓘ - Output Capacitance, typ: 60 pF

Package: DPAK

 SGR20N40L Substitution

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SGR20N40L datasheet

 ..1. Size:186K  1
 sgr20n40l sgu20n40l.pdf pdf_icon

SGR20N40L

August 2001 IGBT SGR20N40L / SGU20N40L General Description Features Insulated Gate Bipolar Transistors (IGBTs) with a trench High input impedance gate structure provide superior conduction and switching High peak current capability (150A) performance in comparison with transistors having a planar Easy gate drive gate structure. They also have wide noise immunity. These ... See More ⇒

 ..2. Size:174K  samsung
 sgr20n40l.pdf pdf_icon

SGR20N40L

Preliminary N-CHANNEL IGBT SGR20N40L / SGU20N40L D-PAK I-PAK FEATURES * High Input Impedance * High Peak Current Capability (150A) * Easy Gate Drive APPLICATIONS C *Strobe Flash G E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VCES 450 V Collector-Emitter Voltage VGES 6 V Gate-Emitter Voltage ICM (1) 150 A Pulsed Collector Current PC 45 W Maximum Power ... See More ⇒

Specs: SGP20N60RUF , SGP23N60UF , SGP40N60UF , SGP5N60RUF , SGP5N60RUFD , SGP6N60UF , SGP6N60UFD , SGR15N40L , YGW60N65F1A1 , SGR2N60UFD , SGR5N60RUF , SGR6N60UF , SGS10N60RUF , SGS10N60RUFD , SGS13N60UF , SGS13N60UFD , SGS23N60UF .

Keywords - SGR20N40L transistor spec

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