SGS23N60UFD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SGS23N60UFD
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 73 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 23 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 27 nS
Coesⓘ - Capacitancia de salida, typ: 100 pF
Paquete / Cubierta: TO220F
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SGS23N60UFD Datasheet (PDF)
sgs23n60ufd.pdf
April 2001 IGBTSGS23N60UFDUltra-Fast IGBTGeneral Description FeaturesFairchild's UFD series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.1 V @ IC = 12AThe UFD series is designed for applications such as motor High input impedancecontrol and general inverters wher
sgs23n60uf.pdf
April 2001 IGBTSGS23N60UFUltra-Fast IGBTGeneral Description FeaturesFairchild's UF series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.1 V @ IC = 12AThe UF series is designed for applications such as motor High input impedancecontrol and general inverters where h
Otros transistores... SGR2N60UFD , SGR5N60RUF , SGR6N60UF , SGS10N60RUF , SGS10N60RUFD , SGS13N60UF , SGS13N60UFD , SGS23N60UF , RJH60F5DPQ-A0 , SGS5N60RUF , SGS5N60RUFD , SGS6N60UF , SGS6N60UFD , SGU15N40L , SGU1N60XFD , SGU20N40L , SGW13N60UF .
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