SGS23N60UFD IGBT. Datasheet pdf. Equivalent
Type Designator: SGS23N60UFD
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 73 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 23 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 27 nS
Coesⓘ - Output Capacitance, typ: 100 pF
Qgⓘ - Total Gate Charge, typ: 49 nC
Package: TO220F
SGS23N60UFD Transistor Equivalent Substitute - IGBT Cross-Reference Search
SGS23N60UFD Datasheet (PDF)
sgs23n60ufd.pdf
April 2001 IGBTSGS23N60UFDUltra-Fast IGBTGeneral Description FeaturesFairchild's UFD series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.1 V @ IC = 12AThe UFD series is designed for applications such as motor High input impedancecontrol and general inverters wher
sgs23n60uf.pdf
April 2001 IGBTSGS23N60UFUltra-Fast IGBTGeneral Description FeaturesFairchild's UF series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.1 V @ IC = 12AThe UF series is designed for applications such as motor High input impedancecontrol and general inverters where h
Datasheet: SGR2N60UFD , SGR5N60RUF , SGR6N60UF , SGS10N60RUF , SGS10N60RUFD , SGS13N60UF , SGS13N60UFD , SGS23N60UF , RJH60F5DPQ-A0 , SGS5N60RUF , SGS5N60RUFD , SGS6N60UF , SGS6N60UFD , SGU15N40L , SGU1N60XFD , SGU20N40L , SGW13N60UF .
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