SKM100GB063D Todos los transistores

 ..1. Size:796K  semikron
 skm100gb063d.pdf

 6.1. Size:788K  semikron
 skm100gb176d.pdf

 6.2. Size:253K  semikron
 skm100gb12v.pdf

SKM100GB12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 159 A Tj = 175 C Tc =80 C 121 A ICnom 100 A ICRM ICRM = 3xICnom 300 A VGES -20 ... 20 V VCC = 720 V SEMITRANS 2 tpsc VGE 20 V Tj =125 C 10 s VCES 1200 V Tj -40 ... 175 C Inverse diode IF Tc =25 C 121 A Tj = 175 C SKM100GB12V Tc =80 C 91 A IFnom 1

 6.3. Size:556K  semikron
 skm100gb173d.pdf

 6.4. Size:541K  semikron
 skm100gb124d.pdf

 6.5. Size:398K  semikron
 skm100gb12t4g.pdf

SKM100GB12T4G Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25 C 154 A Tj = 175 C Tc =80 C 118 A ICnom 100 A ICRM ICRM = 3xICnom 300 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 3 tpsc VGE 15 V Tj = 150 C 10 s VCES 1200 V Tj -40 ... 175 C Fast IGBT4 Modules Inverse diode IF Tc =25 C 118 A Tj = 175 C SKM100GB12T4G Tc =80

 6.6. Size:554K  semikron
 skm100gb123d.pdf

 6.7. Size:480K  semikron
 skm100gb12t4.pdf

SKM100GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25 C 160 A Tj = 175 C Tc =80 C 123 A ICnom 100 A ICRM ICRM = 3xICnom 300 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 2 tpsc VGE 15 V Tj = 150 C 10 s VCES 1200 V Tj -40 ... 175 C Fast IGBT4 Modules Inverse diode IF Tc =25 C 121 A Tj = 175 C SKM100GB12T4 Tc =80 C