All IGBT. SKM100GB063D Datasheet

 

SKM100GB063D IGBT. Datasheet pdf. Equivalent


   Type Designator: SKM100GB063D
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 450 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 130 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 40 nS
   Coesⓘ - Output Capacitance, typ: 600 pF
   Package: MODULE

 SKM100GB063D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SKM100GB063D Datasheet (PDF)

 ..1. Size:796K  semikron
 skm100gb063d.pdf

SKM100GB063D SKM100GB063D

 6.1. Size:788K  semikron
 skm100gb176d.pdf

SKM100GB063D SKM100GB063D

 6.2. Size:253K  semikron
 skm100gb12v.pdf

SKM100GB063D SKM100GB063D

SKM100GB12VAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 159 ATj = 175 CTc =80C 121 AICnom 100 AICRM ICRM = 3xICnom 300 AVGES -20 ... 20 VVCC = 720 VSEMITRANS 2tpsc VGE 20 V Tj =125C 10 sVCES 1200 VTj -40 ... 175 CInverse diodeIF Tc =25C 121 ATj = 175 CSKM100GB12VTc =80C 91 AIFnom 1

 6.3. Size:556K  semikron
 skm100gb173d.pdf

SKM100GB063D SKM100GB063D

 6.4. Size:541K  semikron
 skm100gb124d.pdf

SKM100GB063D SKM100GB063D

 6.5. Size:398K  semikron
 skm100gb12t4g.pdf

SKM100GB063D SKM100GB063D

SKM100GB12T4GAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 154 ATj = 175 CTc =80C 118 AICnom 100 AICRM ICRM = 3xICnom 300 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 118 ATj = 175 CSKM100GB12T4GTc =80

 6.6. Size:554K  semikron
 skm100gb123d.pdf

SKM100GB063D SKM100GB063D

 6.7. Size:480K  semikron
 skm100gb12t4.pdf

SKM100GB063D SKM100GB063D

SKM100GB12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 160 ATj = 175 CTc =80C 123 AICnom 100 AICRM ICRM = 3xICnom 300 AVGES -20 ... 20 VVCC = 800 VSEMITRANS2tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 121 ATj = 175 CSKM100GB12T4Tc =80C

Datasheet: SGW6N60UFD , HIH30N140IH-DB , HIA50N65IH-SA , HIA30N140IH-DA , SKM100GAL123D , SKM100GAR123D , SKM100GAX173D , SKM100GAY173D , FGL60N100BNTD , SKM100GB123D , SKM100GB124D , SKM100GB173D , SKM100GD063DL , SKM145GAL063DN , SKM145GAL123D , SKM145GAL124DN , SKM145GAL174DN .

 

 
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