SKM100GD063DL
- IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SKM100GD063DL
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 450
W
|Vce|ⓘ - Tensión máxima colector-emisor: 600
V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20
V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 130
A
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 2.1
V @25℃
Tjⓘ -
Temperatura máxima de unión: 150
℃
trⓘ - Tiempo de subida, typ: 40
nS
Coesⓘ - Capacitancia de salida, typ: 600
pF
Paquete / Cubierta: MODULE
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SKM100GD063DL
Datasheet (PDF)
7.4. Size:498K semikron
skm100gal12t4.pdf 
SKM100GAL12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 160 ATj = 175 CTc =80C 123 AICnom 100 AICRM ICRM = 3xICnom 300 AVGES -20 ... 20 VVCC = 800 VSEMITRANS 2tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 121 ATj = 175 CSKM100GAL12T
7.5. Size:253K semikron
skm100gb12v.pdf
SKM100GB12VAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 159 ATj = 175 CTc =80C 121 AICnom 100 AICRM ICRM = 3xICnom 300 AVGES -20 ... 20 VVCC = 720 VSEMITRANS 2tpsc VGE 20 V Tj =125C 10 sVCES 1200 VTj -40 ... 175 CInverse diodeIF Tc =25C 121 ATj = 175 CSKM100GB12VTc =80C 91 AIFnom 1
7.9. Size:398K semikron
skm100gb12t4g.pdf
SKM100GB12T4GAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 154 ATj = 175 CTc =80C 118 AICnom 100 AICRM ICRM = 3xICnom 300 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 118 ATj = 175 CSKM100GB12T4GTc =80
7.11. Size:778K semikron
skm100gax173d skm100gay173d.pdf
SEMITRANS MAbsolute Maximum RatingsValuesIGBT ModulesSymbol Conditions 1)UnitsVCES 1700 VVCGR RGE = 20 k 1700 V SKM 100 GAX 173 D 6)IC Tcase = 25/80 C 110 / 75 ASKM 100 GAY 173 D 6)ICM Tcase = 25/80 C; tp = 1 ms 220 / 150 AVGES 20 VPtot per IGBT/Diode, Tcase = 25 C 625 / 310 WTj, (Tstg) 40 ... +150 (125) CVisol AC, 1 min. 4000 Vhumidity DIN 40 04
7.12. Size:480K semikron
skm100gb12t4.pdf
SKM100GB12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 160 ATj = 175 CTc =80C 123 AICnom 100 AICRM ICRM = 3xICnom 300 AVGES -20 ... 20 VVCC = 800 VSEMITRANS2tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 121 ATj = 175 CSKM100GB12T4Tc =80C
Otros transistores... SKM100GAL123D
, SKM100GAR123D
, SKM100GAX173D
, SKM100GAY173D
, SKM100GB063D
, SKM100GB123D
, SKM100GB124D
, SKM100GB173D
, SGT60U65FD1PT
, SKM145GAL063DN
, SKM145GAL123D
, SKM145GAL124DN
, SKM145GAL174DN
, SKM145GAR123D
, SKM145GAX123D
, SKM145GAY123D
, SKM145GB063DN
.
History: IXGX35N120BD1
