SKM100GD063DL Specs and Replacement
Type Designator: SKM100GD063DL
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ -
Maximum Power Dissipation: 450 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 130 A @25℃
Tj ⓘ -
Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
tr ⓘ - Rise Time, typ: 40 nS
Coesⓘ - Output Capacitance, typ: 600 pF
Package: MODULE SKM100GD063DL Substitution
- IGBT ⓘ Cross-Reference Search
SKM100GD063DL datasheet
7.4. Size:498K semikron
skm100gal12t4.pdf 
SKM100GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 160 A Tj = 175 C Tc =80 C 123 A ICnom 100 A ICRM ICRM = 3xICnom 300 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 2 tpsc VGE 15 V Tj = 150 C 10 s VCES 1200 V Tj -40 ... 175 C Fast IGBT4 Modules Inverse diode IF Tc =25 C 121 A Tj = 175 C SKM100GAL12T... See More ⇒
7.5. Size:253K semikron
skm100gb12v.pdf
SKM100GB12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 159 A Tj = 175 C Tc =80 C 121 A ICnom 100 A ICRM ICRM = 3xICnom 300 A VGES -20 ... 20 V VCC = 720 V SEMITRANS 2 tpsc VGE 20 V Tj =125 C 10 s VCES 1200 V Tj -40 ... 175 C Inverse diode IF Tc =25 C 121 A Tj = 175 C SKM100GB12V Tc =80 C 91 A IFnom 1... See More ⇒
7.9. Size:398K semikron
skm100gb12t4g.pdf
SKM100GB12T4G Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25 C 154 A Tj = 175 C Tc =80 C 118 A ICnom 100 A ICRM ICRM = 3xICnom 300 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 3 tpsc VGE 15 V Tj = 150 C 10 s VCES 1200 V Tj -40 ... 175 C Fast IGBT4 Modules Inverse diode IF Tc =25 C 118 A Tj = 175 C SKM100GB12T4G Tc =80 ... See More ⇒
7.11. Size:778K semikron
skm100gax173d skm100gay173d.pdf
SEMITRANS M Absolute Maximum Ratings Values IGBT Modules Symbol Conditions 1) Units VCES 1700 V VCGR RGE = 20 k 1700 V SKM 100 GAX 173 D 6) IC Tcase = 25/80 C 110 / 75 A SKM 100 GAY 173 D 6) ICM Tcase = 25/80 C; tp = 1 ms 220 / 150 A VGES 20 V Ptot per IGBT/Diode, Tcase = 25 C 625 / 310 W Tj, (Tstg) 40 ... +150 (125) C Visol AC, 1 min. 4000 V humidity DIN 40 04... See More ⇒
7.12. Size:480K semikron
skm100gb12t4.pdf
SKM100GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25 C 160 A Tj = 175 C Tc =80 C 123 A ICnom 100 A ICRM ICRM = 3xICnom 300 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 2 tpsc VGE 15 V Tj = 150 C 10 s VCES 1200 V Tj -40 ... 175 C Fast IGBT4 Modules Inverse diode IF Tc =25 C 121 A Tj = 175 C SKM100GB12T4 Tc =80 C ... See More ⇒
Specs: SKM100GAL123D
, SKM100GAR123D
, SKM100GAX173D
, SKM100GAY173D
, SKM100GB063D
, SKM100GB123D
, SKM100GB124D
, SKM100GB173D
, MBQ40T65FDSC
, SKM145GAL063DN
, SKM145GAL123D
, SKM145GAL124DN
, SKM145GAL174DN
, SKM145GAR123D
, SKM145GAX123D
, SKM145GAY123D
, SKM145GB063DN
.
History: SRE100N120FSUDA
| STGWT30H65FB
| TA49021
| SPT60N65F1A1T8TL
| STGWA15H120F2
| SPT25N120F1
| STGW45NC60WD
Keywords - SKM100GD063DL transistor spec
SKM100GD063DL cross reference
SKM100GD063DL equivalent finder
SKM100GD063DL lookup
SKM100GD063DL substitution
SKM100GD063DL replacement
