SKM100GD063DL Datasheet and Replacement
Type Designator: SKM100GD063DL
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 450 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 130 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 40 nS
Coesⓘ - Output Capacitance, typ: 600 pF
Qg ⓘ - Total Gate Charge, typ: 240 nC
Package: MODULE
SKM100GD063DL substitution
SKM100GD063DL Datasheet (PDF)
Datasheet: SKM100GAL123D , SKM100GAR123D , SKM100GAX173D , SKM100GAY173D , SKM100GB063D , SKM100GB123D , SKM100GB124D , SKM100GB173D , SGT60U65FD1PT , SKM145GAL063DN , SKM145GAL123D , SKM145GAL124DN , SKM145GAL174DN , SKM145GAR123D , SKM145GAX123D , SKM145GAY123D , SKM145GB063DN .
History: 1MB08-120 | BSM50GB100D | FGH75T65SQDT | IXGT50N60B
Keywords - SKM100GD063DL transistor datasheet
SKM100GD063DL cross reference
SKM100GD063DL equivalent finder
SKM100GD063DL lookup
SKM100GD063DL substitution
SKM100GD063DL replacement
History: 1MB08-120 | BSM50GB100D | FGH75T65SQDT | IXGT50N60B
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