75321S Todos los transistores

 

75321S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 75321S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 70 W
   Voltaje máximo drenador - fuente |Vds|: 55 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 35 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Conductancia de drenaje-sustrato (Cd): 709 pF
   Resistencia entre drenaje y fuente RDS(on): 0.032 Ohm
   Paquete / Cubierta: TP262AB

 Búsqueda de reemplazo de MOSFET 75321S

 

75321S Datasheet (PDF)

 0.1. Size:235K  fairchild semi
 huf75321p3 huf75321s3s.pdf

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HUF75321P3, HUF75321S3SData Sheet December 200135A, 55V, 0.034 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 35A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Thermal Impedance SPICE and SABER Models achieves the

 0.2. Size:232K  fairchild semi
 hufa75321p3 hufa75321s3s hufa75321s3st.pdf

75321S 75321S

HUFA75321P3, HUFA75321S3SData Sheet December 200135A, 55V, 0.034 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 35A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Thermal Impedance SPICE and SABER Models achieves t

 9.1. Size:226K  fairchild semi
 hufa75321d3 hufa75321d3s.pdf

75321S 75321S

HUFA75321D3, HUFA75321D3SData Sheet December 200120A, 55V, 0.036 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 20A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensating PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Thermal Impedance SPICE and SABER Models achieves

 9.2. Size:224K  fairchild semi
 hufa75321d3 hufa75321d3st.pdf

75321S 75321S

HUFA75321D3, HUFA75321D3SData Sheet December 200120A, 55V, 0.036 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 20A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensating PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Thermal Impedance SPICE and SABER Models achieves

 9.3. Size:785K  onsemi
 huf75321p3.pdf

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Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.4. Size:798K  cn vbsemi
 huf75321d3s.pdf

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HUF75321D3Swww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise n

Otros transistores... 40823 , 40841 , 75307D3 , 75307P3 , 75309D , 75309P3 , 75321D3 , 75321P , NCEP018N10LL , 75329G , 75329P , 75329S , 75333G , 75333P , 75333S , 75339G , 75339P .

 

 
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