75321S MOSFET. Datasheet pdf. Equivalent
Type Designator: 75321S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 70 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 35 A
Maximum Junction Temperature (Tj): 150 °C
Drain-Source Capacitance (Cd): 709 pF
Maximum Drain-Source On-State Resistance (Rds): 0.032 Ohm
Package: TP262AB
75321S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
75321S Datasheet (PDF)
0.1. hufa75321p3 hufa75321s3s hufa75321s3st.pdf 
Size:232K _fairchild_semi
HUFA75321P3, HUFA75321S3S Data Sheet December 2001 35A, 55V, 0.034 Ohm, N-Channel UltraFET Features Power MOSFETs • 35A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABER™ innovative UltraFET® process. This Models advanced process technology - Thermal Impedance SPICE and SABER Models achieves t
0.2. huf75321p3 huf75321s3s.pdf Size:235K _fairchild_semi
HUF75321P3, HUF75321S3S Data Sheet December 2001 35A, 55V, 0.034 Ohm, N-Channel UltraFET Features Power MOSFETs • 35A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABER™ innovative UltraFET® process. This Models advanced process technology - Thermal Impedance SPICE and SABER Models achieves the
9.1. hufa75321d3 hufa75321d3st.pdf Size:224K _fairchild_semi
HUFA75321D3, HUFA75321D3S Data Sheet December 2001 20A, 55V, 0.036 Ohm, N-Channel UltraFET Features Power MOSFETs • 20A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensating PSPICE® and SABER™ innovative UltraFET® process. This Models advanced process technology - Thermal Impedance SPICE and SABER Models achieves
9.2. hufa75321d3 hufa75321d3s.pdf Size:226K _fairchild_semi
HUFA75321D3, HUFA75321D3S Data Sheet December 2001 20A, 55V, 0.036 Ohm, N-Channel UltraFET Features Power MOSFETs • 20A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensating PSPICE® and SABER™ innovative UltraFET® process. This Models advanced process technology - Thermal Impedance SPICE and SABER Models achieves
Datasheet: 40823 , 40841 , 75307D3 , 75307P3 , 75309D , 75309P3 , 75321D3 , 75321P , IRF740 , 75329G , 75329P , 75329S , 75333G , 75333P , 75333S , 75339G , 75339P .
