BUK9518-55A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BUK9518-55A; BUK9618-55ATrenchMOS logic level FETRev. 01 27 August 2001 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9518-55A in SOT78 (TO-220AB)2BUK9618-55A in SOT404 (D -PAK).2. Features TrenchMOS technology Q

isc N-Channel MOSFET Transistor BUK9518-55AFEATURESStatic drain-source on-resistance:RDS(on) 16mFully characterized avalanche voltage and current100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONAutomotive and general purpose power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

Philips Semiconductors Product specification TrenchMOS transistor BUK9518-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 55 Vtechnology. The device features very ID Drain current (DC) 57 Alow on-state resist

Philips Semiconductors Product specification TrenchMOS transistor BUK9518-30 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 30 Vtechnology. The device features very ID Drain current (DC) 55 Alow on-state resist

Philips Semiconductors Product specification TrenchMOS transistor BUK95180-100A Logic level FET BUK96180-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 100 VTO220AB and SOT404 . Using ID Drain current (DC) 11 Atrench tec