Справочник MOSFET. BUK9518-55A

 

BUK9518-55A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BUK9518-55A
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 136 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 15 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 61 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm
   Тип корпуса: TO220AB

 Аналог (замена) для BUK9518-55A

 

 

BUK9518-55A Datasheet (PDF)

 ..1. Size:333K  philips
 buk9518-55a buk9618-55a.pdf

BUK9518-55A BUK9518-55A

BUK9518-55A; BUK9618-55ATrenchMOS logic level FETRev. 01 27 August 2001 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9518-55A in SOT78 (TO-220AB)2BUK9618-55A in SOT404 (D -PAK).2. Features TrenchMOS technology Q

 ..2. Size:225K  inchange semiconductor
 buk9518-55a.pdf

BUK9518-55A BUK9518-55A

isc N-Channel MOSFET Transistor BUK9518-55AFEATURESStatic drain-source on-resistance:RDS(on) 16mFully characterized avalanche voltage and current100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONAutomotive and general purpose power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

 4.1. Size:52K  philips
 buk9518-55.pdf

BUK9518-55A BUK9518-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK9518-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 55 Vtechnology. The device features very ID Drain current (DC) 57 Alow on-state resist

 6.1. Size:47K  philips
 buk9518-30 1.pdf

BUK9518-55A BUK9518-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK9518-30 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 30 Vtechnology. The device features very ID Drain current (DC) 55 Alow on-state resist

 7.1. Size:68K  philips
 buk95180-100a buk96180-100a.pdf

BUK9518-55A BUK9518-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK95180-100A Logic level FET BUK96180-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 100 VTO220AB and SOT404 . Using ID Drain current (DC) 11 Atrench tec

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History: IRF5804

 

 
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