BUK9518-55A Datasheet. Specs and Replacement

Type Designator: BUK9518-55A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 136 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 61 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: TO220AB

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BUK9518-55A datasheet

 ..1. Size:333K  philips
 buk9518-55a buk9618-55a.pdf pdf_icon

BUK9518-55A

BUK9518-55A; BUK9618-55A TrenchMOS logic level FET Rev. 01 27 August 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9518-55A in SOT78 (TO-220AB) 2 BUK9618-55A in SOT404 (D -PAK). 2. Features TrenchMOS technology Q... See More ⇒

 ..2. Size:225K  inchange semiconductor
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BUK9518-55A

isc N-Channel MOSFET Transistor BUK9518-55A FEATURES Static drain-source on-resistance RDS(on) 16m Fully characterized avalanche voltage and current 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION Automotive and general purpose power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME... See More ⇒

 4.1. Size:52K  philips
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BUK9518-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK9518-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench VDS Drain-source voltage 55 V technology. The device features very ID Drain current (DC) 57 A low on-state resist... See More ⇒

 6.1. Size:47K  philips
 buk9518-30 1.pdf pdf_icon

BUK9518-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK9518-30 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench VDS Drain-source voltage 30 V technology. The device features very ID Drain current (DC) 55 A low on-state resist... See More ⇒

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Detailed specifications: BUK9511-55A, BUK9512-55B, BUK9514-55A, BUK95150-55A, BUK9515-100A, BUK9516-55A, BUK9516-75B, BUK95180-100A, IRFB4227, BUK9520-100A, BUK9520-100B, BUK9520-55A, BUK9523-75A, BUK9524-55A, BUK9529-100B, BUK952R8-30B, BUK9535-100A

Keywords - BUK9518-55A MOSFET specs

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