BUK9535-100A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK9535-100A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 149 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 41 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.034 Ohm

Encapsulados: TO220AB

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BUK9535-100A datasheet

 ..1. Size:337K  philips
 buk9535-100a buk9635-100a.pdf pdf_icon

BUK9535-100A

BUK9535-100A; BUK9635-100A TrenchMOS logic level FET Rev. 01 22 January 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9535-100A in SOT78 (TO-220AB) BUK9635-100A in SOT404 (D 2-PAK). 2. Features TrenchMOS t

 6.1. Size:71K  philips
 buk9535-55a buk9635-55a.pdf pdf_icon

BUK9535-100A

Philips Semiconductors Product specification TrenchMOS transistor BUK9535-55A Logic level FET BUK9635-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 34 A trench technolo

 6.2. Size:53K  philips
 buk9535-55 2.pdf pdf_icon

BUK9535-100A

Philips Semiconductors Product specification TrenchMOS transistor BUK9535-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench VDS Drain-source voltage 55 V technology. The device features very ID Drain current (DC) 34 A low on-state resist

 8.1. Size:325K  philips
 buk953r2-40 buk963r2-40b buk9e3r2-40b.pdf pdf_icon

BUK9535-100A

BUK95/96/9E3R2-40B TrenchMOS logic level FET Rev. 04 14 November 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible. 1.3 Applications A

MOSTRAR MÁS

Otros transistores... BUK9518-55A, BUK9520-100A, BUK9520-100B, BUK9520-55A, BUK9523-75A, BUK9524-55A, BUK9529-100B, BUK952R8-30B, 2SK3878, BUK9535-55A, BUK953R2-40B, BUK954R2-55B, BUK954R4-40B, BUK9575-100A, BUK9575-55A, BUK9604-40A, BUK9605-30A