All MOSFET. BUK9535-100A Datasheet

 

BUK9535-100A Datasheet and Replacement


   Type Designator: BUK9535-100A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 149 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 41 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
   Package: TO220AB
 

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BUK9535-100A Datasheet (PDF)

 ..1. Size:337K  philips
buk9535-100a buk9635-100a.pdf pdf_icon

BUK9535-100A

BUK9535-100A;BUK9635-100ATrenchMOS logic level FETRev. 01 22 January 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9535-100A in SOT78 (TO-220AB)BUK9635-100A in SOT404 (D 2-PAK).2. Features TrenchMOS t

 6.1. Size:71K  philips
buk9535-55a buk9635-55a.pdf pdf_icon

BUK9535-100A

Philips Semiconductors Product specification TrenchMOS transistor BUK9535-55A Logic level FET BUK9635-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 55 VTO220AB and SOT404 . Using ID Drain current (DC) 34 Atrench technolo

 6.2. Size:53K  philips
buk9535-55 2.pdf pdf_icon

BUK9535-100A

Philips Semiconductors Product specification TrenchMOS transistor BUK9535-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 55 Vtechnology. The device features very ID Drain current (DC) 34 Alow on-state resist

 8.1. Size:325K  philips
buk953r2-40 buk963r2-40b buk9e3r2-40b.pdf pdf_icon

BUK9535-100A

BUK95/96/9E3R2-40BTrenchMOS logic level FETRev. 04 14 November 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible.1.3 Applications A

Datasheet: BUK9518-55A , BUK9520-100A , BUK9520-100B , BUK9520-55A , BUK9523-75A , BUK9524-55A , BUK9529-100B , BUK952R8-30B , IRFP260 , BUK9535-55A , BUK953R2-40B , BUK954R2-55B , BUK954R4-40B , BUK9575-100A , BUK9575-55A , BUK9604-40A , BUK9605-30A .

History: MTP6N60E | IXTQ50N28T | OSG60R028HF | SWK110R03VT | ELM36800EA | SM2205PSQG | 2SK533

Keywords - BUK9535-100A MOSFET datasheet

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