BUK9606-55B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK9606-55B

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 258 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 15 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0054 Ohm

Encapsulados: D2PAK

 Búsqueda de reemplazo de BUK9606-55B MOSFET

- Selecciónⓘ de transistores por parámetros

 

BUK9606-55B datasheet

 ..1. Size:687K  nxp
 buk9606-55b.pdf pdf_icon

BUK9606-55B

BUK9606-55B N-channel TrenchMOS FET Rev. 04 23 July 2009 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low cond

 4.1. Size:56K  philips
 buk9606-55a 1.pdf pdf_icon

BUK9606-55B

Philips Semiconductors Product specification TrenchMOS transistor BUK9606-55A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using trench technology ID Drain current (DC) 75 A the device fe

 4.2. Size:66K  philips
 buk9506 buk9606-55a 2.pdf pdf_icon

BUK9606-55B

Philips Semiconductors Product specification TrenchMOS transistor BUK9506-55A Logic level FET BUK9606-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 75 A trench technolo

 4.3. Size:808K  nxp
 buk9606-55a.pdf pdf_icon

BUK9606-55B

BUK9606-55A N-channel TrenchMOS logic level FET Rev. 04 31 May 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features

MOSTRAR MÁS

Otros transistores... BUK954R2-55B, BUK954R4-40B, BUK9575-100A, BUK9575-55A, BUK9604-40A, BUK9605-30A, BUK9606-40B, BUK9606-55A, SKD502T, BUK9606-75B, BUK9607-30B, BUK9608-55A, BUK9608-55B, BUK9609-40B, BUK9609-55A, BUK9609-75A, BUK9610-100B