All MOSFET. BUK9606-55B Datasheet

 

BUK9606-55B MOSFET. Datasheet pdf. Equivalent


   Type Designator: BUK9606-55B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 258 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 60 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
   Package: D2PAK

 BUK9606-55B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK9606-55B Datasheet (PDF)

 ..1. Size:687K  nxp
 buk9606-55b.pdf

BUK9606-55B BUK9606-55B

BUK9606-55BN-channel TrenchMOS FETRev. 04 23 July 2009 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features and benefits Low cond

 4.1. Size:56K  philips
 buk9606-55a 1.pdf

BUK9606-55B BUK9606-55B

Philips Semiconductors Product specification TrenchMOS transistor BUK9606-55A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. Using trench technology ID Drain current (DC) 75 Athe device fe

 4.2. Size:66K  philips
 buk9506 buk9606-55a 2.pdf

BUK9606-55B BUK9606-55B

Philips Semiconductors Product specification TrenchMOS transistor BUK9506-55A Logic level FET BUK9606-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 55 VTO220AB and SOT404 . Using ID Drain current (DC) 75 Atrench technolo

 4.3. Size:808K  nxp
 buk9606-55a.pdf

BUK9606-55B BUK9606-55B

BUK9606-55AN-channel TrenchMOS logic level FETRev. 04 31 May 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AM7335P | BUK9618-30 | FDFC2P100 | IXTK160N20

 

 
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