BUK9606-55B Specs and Replacement

Type Designator: BUK9606-55B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 258 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm

Package: D2PAK

BUK9606-55B substitution

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BUK9606-55B datasheet

 ..1. Size:687K  nxp
 buk9606-55b.pdf pdf_icon

BUK9606-55B

BUK9606-55B N-channel TrenchMOS FET Rev. 04 23 July 2009 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low cond... See More ⇒

 4.1. Size:56K  philips
 buk9606-55a 1.pdf pdf_icon

BUK9606-55B

Philips Semiconductors Product specification TrenchMOS transistor BUK9606-55A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using trench technology ID Drain current (DC) 75 A the device fe... See More ⇒

 4.2. Size:66K  philips
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BUK9606-55B

Philips Semiconductors Product specification TrenchMOS transistor BUK9506-55A Logic level FET BUK9606-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 75 A trench technolo... See More ⇒

 4.3. Size:808K  nxp
 buk9606-55a.pdf pdf_icon

BUK9606-55B

BUK9606-55A N-channel TrenchMOS logic level FET Rev. 04 31 May 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features ... See More ⇒

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Detailed specifications: BUK954R2-55B, BUK954R4-40B, BUK9575-100A, BUK9575-55A, BUK9604-40A, BUK9605-30A, BUK9606-40B, BUK9606-55A, SKD502T, BUK9606-75B, BUK9607-30B, BUK9608-55A, BUK9608-55B, BUK9609-40B, BUK9609-55A, BUK9609-75A, BUK9610-100B

Keywords - BUK9606-55B MOSFET specs

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