BUK9609-55A Todos los transistores

 

BUK9609-55A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK9609-55A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 211 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: D2PAK
 

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BUK9609-55A Datasheet (PDF)

 ..1. Size:313K  philips
 buk9509-55a buk9509-55a buk9609-55a.pdf pdf_icon

BUK9609-55A

BUK95/9609-55ATrenchMOS logic level FETRev. 01 21 February 2002 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9509-55A in SOT78 (TO-220AB)BUK9609-55A in SOT404 (D2-PAK).2. Features TrenchMOS technology Q101 complia

 6.1. Size:751K  nxp
 buk9609-75a.pdf pdf_icon

BUK9609-55A

BUK9609-75AN-channel TrenchMOS logic level FETRev. 4 30 August 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Feature

 6.2. Size:976K  nxp
 buk9609-40b.pdf pdf_icon

BUK9609-55A

BUK9609-40BN-channel TrenchMOS logic level FETRev. 02 7 June 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

 7.1. Size:326K  philips
 buk9509 buk9609 75a-02.pdf pdf_icon

BUK9609-55A

BUK9509-75A; BUK9609-75ATrenchMOS logic level FETRev. 02 06 November 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9509-75A in SOT78 (TO-220AB)BUK9609-75A in SOT404 (D 2-PAK).2. Features TrenchMOS techn

MOSTRAR MÁS

Otros transistores... BUK9606-40B , BUK9606-55A , BUK9606-55B , BUK9606-75B , BUK9607-30B , BUK9608-55A , BUK9608-55B , BUK9609-40B , TK10A60D , BUK9609-75A , BUK9610-100B , BUK9610-55A , BUK9611-55A , BUK9612-55B , BUK9614-55A , BUK9615-100A , BUK9616-55A .

History: IRF7809AVPBF-1 | 2N7002PS | IXTN17N120L | VMO580-02F

 

 
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