BUK9609-55A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK9609-55A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 211 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 15 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm

Encapsulados: D2PAK

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BUK9609-55A datasheet

 ..1. Size:313K  philips
 buk9509-55a buk9509-55a buk9609-55a.pdf pdf_icon

BUK9609-55A

BUK95/9609-55A TrenchMOS logic level FET Rev. 01 21 February 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9509-55A in SOT78 (TO-220AB) BUK9609-55A in SOT404 (D2-PAK). 2. Features TrenchMOS technology Q101 complia

 6.1. Size:751K  nxp
 buk9609-75a.pdf pdf_icon

BUK9609-55A

BUK9609-75A N-channel TrenchMOS logic level FET Rev. 4 30 August 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Feature

 6.2. Size:976K  nxp
 buk9609-40b.pdf pdf_icon

BUK9609-55A

BUK9609-40B N-channel TrenchMOS logic level FET Rev. 02 7 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features

 7.1. Size:326K  philips
 buk9509 buk9609 75a-02.pdf pdf_icon

BUK9609-55A

BUK9509-75A; BUK9609-75A TrenchMOS logic level FET Rev. 02 06 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9509-75A in SOT78 (TO-220AB) BUK9609-75A in SOT404 (D 2-PAK). 2. Features TrenchMOS techn

MOSTRAR MÁS

Otros transistores... BUK9606-40B, BUK9606-55A, BUK9606-55B, BUK9606-75B, BUK9607-30B, BUK9608-55A, BUK9608-55B, BUK9609-40B, IRF1010E, BUK9609-75A, BUK9610-100B, BUK9610-55A, BUK9611-55A, BUK9612-55B, BUK9614-55A, BUK9615-100A, BUK9616-55A