All MOSFET. BUK9609-55A Datasheet

 

BUK9609-55A Datasheet and Replacement


   Type Designator: BUK9609-55A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 211 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 60 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: D2PAK
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BUK9609-55A Datasheet (PDF)

 ..1. Size:313K  philips
 buk9509-55a buk9509-55a buk9609-55a.pdf pdf_icon

BUK9609-55A

BUK95/9609-55ATrenchMOS logic level FETRev. 01 21 February 2002 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9509-55A in SOT78 (TO-220AB)BUK9609-55A in SOT404 (D2-PAK).2. Features TrenchMOS technology Q101 complia

 6.1. Size:751K  nxp
 buk9609-75a.pdf pdf_icon

BUK9609-55A

BUK9609-75AN-channel TrenchMOS logic level FETRev. 4 30 August 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Feature

 6.2. Size:976K  nxp
 buk9609-40b.pdf pdf_icon

BUK9609-55A

BUK9609-40BN-channel TrenchMOS logic level FETRev. 02 7 June 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

 7.1. Size:326K  philips
 buk9509 buk9609 75a-02.pdf pdf_icon

BUK9609-55A

BUK9509-75A; BUK9609-75ATrenchMOS logic level FETRev. 02 06 November 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9509-75A in SOT78 (TO-220AB)BUK9609-75A in SOT404 (D 2-PAK).2. Features TrenchMOS techn

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