Справочник MOSFET. BUK9609-55A

 

BUK9609-55A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: BUK9609-55A

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 211 W

Предельно допустимое напряжение сток-исток (Uds): 55 V

Предельно допустимое напряжение затвор-исток (Ugs): 15 V

Пороговое напряжение включения Ugs(th): 2 V

Максимально допустимый постоянный ток стока (Id): 75 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 60 nC

Сопротивление сток-исток открытого транзистора (Rds): 0.008 Ohm

Тип корпуса: D2PAK

Аналог (замена) для BUK9609-55A

 

 

BUK9609-55A Datasheet (PDF)

1.1. buk9509-55a buk9609-55a.pdf Size:313K _philips

BUK9609-55A
BUK9609-55A

BUK95/9609-55A TrenchMOS logic level FET Rev. 01 21 February 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK9509-55A in SOT78 (TO-220AB) BUK9609-55A in SOT404 (D2-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C

3.1. buk9509 buk9609 75a-02.pdf Size:326K _philips

BUK9609-55A
BUK9609-55A

BUK9509-75A; BUK9609-75A TrenchMOS logic level FET Rev. 02 06 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK9509-75A in SOT78 (TO-220AB) BUK9609-75A in SOT404 (D 2-PAK). 2. Features TrenchMOS technology Q10

 4.1. buk9606-30 1.pdf Size:51K _philips

BUK9609-55A
BUK9609-55A

Philips Semiconductors Product specification TrenchMOS? transistor BUK9606-30 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 30 V mounting using trench technology. ID Drain current (DC) 75 A Thedevice features very

4.2. buk9508 buk9608-55a 2.pdf Size:78K _philips

BUK9609-55A
BUK9609-55A

Philips Semiconductors Product specification TrenchMOS? transistor BUK9508-55A Logic level FET BUK9608-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 75 A trench technology which

 4.3. buk9506-75b buk9606-75b.pdf Size:333K _philips

BUK9609-55A
BUK9609-55A

BUK95/9606-75B TrenchMOS logic level FET Rev. 02 30 September 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. Product availability: BUK9506-75B in SOT78 (TO-220AB) BUK9606-75B in SOT404 (D2-PAK). 1.2 Features Very low on-state resistance

4.4. buk9506 buk9606-55a 2.pdf Size:66K _philips

BUK9609-55A
BUK9609-55A

Philips Semiconductors Product specification TrenchMOS? transistor BUK9506-55A Logic level FET BUK9606-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 75 A trench technology which

 4.5. buk9606-55a 1.pdf Size:56K _philips

BUK9609-55A
BUK9609-55A

Philips Semiconductors Product specification TrenchMOS? transistor BUK9606-55A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using trench technology ID Drain current (DC) 75 A the device features ve

4.6. buk9507-30b buk9607-30b.pdf Size:300K _philips

BUK9609-55A
BUK9609-55A

BUK95/9607-30B TrenchMOS logic level FET Rev. 01 25 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. Product availability: BUK9507-30B in SOT78 (TO-220AB) BUK9607-30B in SOT404 (D2-PAK). 1.2 Features Low on-state resistance Q1

4.7. buk9608-55 2.pdf Size:55K _philips

BUK9609-55A
BUK9609-55A

Philips Semiconductors Product specification TrenchMOS? transistor BUK9608-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting Using trench technology ID Drain current (DC) 75 A the device features very

4.8. buk9508-55a buk9608-55a.pdf Size:328K _philips

BUK9609-55A
BUK9609-55A

BUK95/9608-55A TrenchMOS logic level FET Rev. 03 6 May 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK9508-55A in SOT78 (TO-220AB) BUK9608-55A in SOT404 (D2-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated

4.9. buk9605-30a 2.pdf Size:55K _philips

BUK9609-55A
BUK9609-55A

Philips Semiconductors Product specification TrenchMOS? transistor BUK9605-30A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 30 V mounting. Using trench technology ID Drain current (DC) 75 A the device features ve

4.10. buk9504-40a buk9604-40a buk9e04-40a.pdf Size:358K _philips

BUK9609-55A
BUK9609-55A

BUK95/96/9E04-40A TrenchMOS logic level FET Rev. 01 24 October 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK9504-40A in SOT78 (TO-220AB); BUK9604-40A in SOT404 (D 2-PAK); BUK9E04-40A in SOT226 (I2-PAK). 2. Features TrenchMOS

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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MOSFET: BUK637-400B | BUK437-500A | CMI80N06 | CMB80N06 | CMP80N06 | MTY30N50E | 2SK3262-01MR | VN88AF | TK290P60Y | SW069R10VS | SUP70040E | SUD25N15-52-E3 | STP30NF10FP | SKS10N20 | SiHA11N80E |
 

 

 

 

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