Справочник MOSFET. BUK9609-55A

 

BUK9609-55A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: BUK9609-55A

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 211 W

Предельно допустимое напряжение сток-исток (Uds): 55 V

Предельно допустимое напряжение затвор-исток (Ugs): 15 V

Пороговое напряжение включения Ugs(th): 2 V

Максимально допустимый постоянный ток стока (Id): 75 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 60 nC

Сопротивление сток-исток открытого транзистора (Rds): 0.008 Ohm

Тип корпуса: D2PAK

Аналог (замена) для BUK9609-55A

 

 

BUK9609-55A Datasheet (PDF)

1.1. buk9509-55a buk9509-55a buk9609-55a.pdf Size:313K _philips

BUK9609-55A
BUK9609-55A

BUK95/9609-55A TrenchMOS™ logic level FET Rev. 01 — 21 February 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9509-55A in SOT78 (TO-220AB) BUK9609-55A in SOT404 (D2-PAK). 2. Features TrenchMOS™ technology Q101 complia

3.1. buk9509 buk9609 75a-02.pdf Size:326K _philips

BUK9609-55A
BUK9609-55A

BUK9509-75A; BUK9609-75A TrenchMOS™ logic level FET Rev. 02 — 06 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9509-75A in SOT78 (TO-220AB) BUK9609-75A in SOT404 (D 2-PAK). 2. Features TrenchMOS™ techn

 4.1. buk9606-30 1.pdf Size:51K _philips

BUK9609-55A
BUK9609-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK9606-30 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 30 V mounting using ’trench’ technology. ID Drain current (DC) 75 A Thedevice feat

4.2. buk9504-40a buk9604-40a buk9e04-40a.pdf Size:358K _philips

BUK9609-55A
BUK9609-55A

BUK95/96/9E04-40A TrenchMOS™ logic level FET Rev. 01 — 24 October 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9504-40A in SOT78 (TO-220AB); BUK9604-40A in SOT404 (D 2-PAK); BUK9E04-40A in SOT226 (I2-PAK). 2. Features Tr

 4.3. buk9508-55a buk9508-55a buk9608-55a.pdf Size:328K _philips

BUK9609-55A
BUK9609-55A

BUK95/9608-55A TrenchMOS™ logic level FET Rev. 03 — 6 May 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9508-55A in SOT78 (TO-220AB) BUK9608-55A in SOT404 (D2-PAK). 2. Features TrenchMOS™ technology Q101 compliant 1

4.4. buk9608-55 2.pdf Size:55K _philips

BUK9609-55A
BUK9609-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK9608-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting Using ’trench’ technology ID Drain current (DC) 75 A the device feat

 4.5. buk9506-75b buk9606-75b.pdf Size:333K _philips

BUK9609-55A
BUK9609-55A

BUK95/9606-75B TrenchMOS™ logic level FET Rev. 02 — 30 September 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology. Product availability: BUK9506-75B in SOT78 (TO-220AB) BUK9606-75B in SOT404 (D2-PAK). 1.2 Features Very low on-state r

4.6. buk9605-30a 2.pdf Size:55K _philips

BUK9609-55A
BUK9609-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK9605-30A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 30 V mounting. Using ’trench’ technology ID Drain current (DC) 75 A the device fe

4.7. buk9508 buk9608-55a 2.pdf Size:78K _philips

BUK9609-55A
BUK9609-55A

 Philips Semiconductors Product specification TrenchMOS transistor BUK9508-55A Logic level FET BUK9608-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 75 A ’trench’ technolo

4.8. buk9506 buk9606-55a 2.pdf Size:66K _philips

BUK9609-55A
BUK9609-55A

 Philips Semiconductors Product specification TrenchMOS transistor BUK9506-55A Logic level FET BUK9606-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 75 A ’trench’ technolo

4.9. buk9507-30b buk9607-30b.pdf Size:300K _philips

BUK9609-55A
BUK9609-55A

BUK95/9607-30B TrenchMOS™ logic level FET Rev. 01 — 25 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. Product availability: BUK9507-30B in SOT78 (TO-220AB) BUK9607-30B in SOT404 (D2-PAK). 1.2 Features Low on-state resi

4.10. buk9606-55a 1.pdf Size:56K _philips

BUK9609-55A
BUK9609-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK9606-55A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using ’trench’ technology ID Drain current (DC) 75 A the device fe

Другие MOSFET... BUK9606-40B , BUK9606-55A , BUK9606-55B , BUK9606-75B , BUK9607-30B , BUK9608-55A , BUK9608-55B , BUK9609-40B , J310 , BUK9609-75A , BUK9610-100B , BUK9610-55A , BUK9611-55A , BUK9612-55B , BUK9614-55A , BUK9615-100A , BUK9616-55A .

 

 
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