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BUK9E06-55A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK9E06-55A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0058 Ohm
   Paquete / Cubierta: I2PAK
 

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BUK9E06-55A Datasheet (PDF)

 ..1. Size:199K  philips
buk9e06-55a.pdf pdf_icon

BUK9E06-55A

BUK9E06-55AN-channel TrenchMOS logic level FETRev. 04 31 May 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

 4.1. Size:115K  philips
buk95 buk96 buk9e06-55b.pdf pdf_icon

BUK9E06-55A

BUK95/96/9E06-55BN-channel TrenchMOS logic level FETRev. 03 30 November 2004 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology, featuring very lowon-state resistance.1.2 Features TrenchMOS technology Q101 compli

 8.1. Size:358K  philips
buk9504-40a buk9604-40a buk9e04-40a.pdf pdf_icon

BUK9E06-55A

BUK95/96/9E04-40ATrenchMOS logic level FETRev. 01 24 October 2001 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9504-40A in SOT78 (TO-220AB); BUK9604-40A in SOT404 (D 2-PAK);BUK9E04-40A in SOT226 (I2-PAK).2. Features Tr

 8.2. Size:339K  philips
buk9e08-55b.pdf pdf_icon

BUK9E06-55A

BUK9E08-55BN-channel TrenchMOS logic level FETRev. 03 31 May 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

Otros transistores... BUK9880-55A , BUK9907-40ATC , BUK9907-55ATE , BUK9C07-65BIT , BUK9C10-55BIT , BUK9C10-65BIT , BUK9E04-30B , BUK9E04-40A , 8N60 , BUK9E06-55B , BUK9E08-55B , BUK9E3R2-40B , BUK9E4R4-40B , BUK9MFF-65PSS , BUK9MGP-55PTS , BUK9MHH-65PNN , BUK9MJJ-55PSS .

History: IXFH23N80Q | FTK100N10P | CHM65A3PAGP | AOD4187 | SUM90N08-7M6P | DAMH50N500H | IRF5NJ9540

 

 
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