BUK9E06-55A - параметры транзистора MOSFET, его аналоги, datasheet

BUK9E06-55A Datasheet (PDF)

..1. Size:199K philips
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BUK9E06-55AN-channel TrenchMOS logic level FETRev. 04 31 May 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

4.1. Size:115K philips
buk95 buk96 buk9e06-55b.pdf pdf_icon

BUK95/96/9E06-55BN-channel TrenchMOS logic level FETRev. 03 30 November 2004 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology, featuring very lowon-state resistance.1.2 Features TrenchMOS technology Q101 compli

8.1. Size:358K philips
buk9504-40a buk9604-40a buk9e04-40a.pdf pdf_icon

BUK95/96/9E04-40ATrenchMOS logic level FETRev. 01 24 October 2001 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9504-40A in SOT78 (TO-220AB); BUK9604-40A in SOT404 (D 2-PAK);BUK9E04-40A in SOT226 (I2-PAK).2. Features Tr

8.2. Size:339K philips
buk9e08-55b.pdf pdf_icon

BUK9E08-55BN-channel TrenchMOS logic level FETRev. 03 31 May 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features