All MOSFET. BUK9E06-55A Datasheet

 

BUK9E06-55A MOSFET. Datasheet pdf. Equivalent

Type Designator: BUK9E06-55A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 15 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 75 A

Maximum Junction Temperature (Tj): 175 °C

Maximum Drain-Source On-State Resistance (Rds): 0.0058 Ohm

Package: I2PAK

BUK9E06-55A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK9E06-55A Datasheet (PDF)

1.1. buk95 buk96 buk9e06-55b.pdf Size:115K _philips

BUK9E06-55A
BUK9E06-55A

BUK95/96/9E06-55B N-channel TrenchMOS logic level FET Rev. 03 30 November 2004 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology, featuring very low on-state resistance. 1.2 Features TrenchMOS technology Q101 compliant 175

1.2. buk9e06-55a.pdf Size:199K _philips

BUK9E06-55A
BUK9E06-55A

BUK9E06-55A N-channel TrenchMOS logic level FET Rev. 04 31 May 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and b

 4.1. buk9e08-55b.pdf Size:339K _philips

BUK9E06-55A
BUK9E06-55A

BUK9E08-55B N-channel TrenchMOS logic level FET Rev. 03 31 May 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and b

4.2. buk9504-40a buk9604-40a buk9e04-40a.pdf Size:358K _philips

BUK9E06-55A
BUK9E06-55A

BUK95/96/9E04-40A TrenchMOS logic level FET Rev. 01 24 October 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK9504-40A in SOT78 (TO-220AB); BUK9604-40A in SOT404 (D 2-PAK); BUK9E04-40A in SOT226 (I2-PAK). 2. Features TrenchMOS

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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