75339P Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 75339P  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 124 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 2000 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm

Encapsulados: TO220

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75339P datasheet

 0.1. Size:308K  fairchild semi
 huf75339g3 huf75339p3 huf75339s3s.pdf pdf_icon

75339P

HUF75339G3, HUF75339P3, HUF75339S3S Data Sheet December 2001 75A, 55V, 0.012 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models

 0.2. Size:803K  onsemi
 huf75339p3.pdf pdf_icon

75339P

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:226K  fairchild semi
 hufa75339g3 hufa75339s3s hufa75339s3st.pdf pdf_icon

75339P

HUFA75339G3, HUFA75339P3, HUFA75339S3S Data Sheet December 2001 75A, 55V, 0.012 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models

 9.2. Size:258K  inchange semiconductor
 hufa75339g3.pdf pdf_icon

75339P

Isc N-Channel MOSFET Transistor HUFA75339G3 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

MOSTRAR MÁS

Otros transistores... 75321S, 75329G, 75329P, 75329S, 75333G, 75333P, 75333S, 75339G, IRFP460, 75339S, 7N50A, A498, ALD1101APA, ALD1101BPA, ALD1101DA, ALD1101MA, APT1001R1AN