75339P
MOSFET. Datasheet pdf. Equivalent
Type Designator: 75339P
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 124
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 75
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 2000
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012
Ohm
Package:
TO220
75339P
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
75339P
Datasheet (PDF)
0.1. Size:308K fairchild semi
huf75339g3 huf75339p3 huf75339s3s.pdf 
HUF75339G3, HUF75339P3, HUF75339S3SData Sheet December 200175A, 55V, 0.012 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 75A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impedance Models
0.2. Size:803K onsemi
huf75339p3.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.1. Size:226K fairchild semi
hufa75339g3 hufa75339s3s hufa75339s3st.pdf
HUFA75339G3, HUFA75339P3, HUFA75339S3SData Sheet December 200175A, 55V, 0.012 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 75A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impedance Models
9.2. Size:258K inchange semiconductor
hufa75339g3.pdf
Isc N-Channel MOSFET Transistor HUFA75339G3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V
Datasheet: 75321S
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, IRFZ44
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, A498
, ALD1101APA
, ALD1101BPA
, ALD1101DA
, ALD1101MA
, APT1001R1AN
.
