75339P. Аналоги и основные параметры

Наименование производителя: 75339P

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 124 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 55 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 75 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

Cossⓘ - Выходная емкость: 2000 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.012 Ohm

Тип корпуса: TO220

Аналог (замена) для 75339P

- подборⓘ MOSFET транзистора по параметрам

 

75339P даташит

 0.1. Size:308K  fairchild semi
 huf75339g3 huf75339p3 huf75339s3s.pdf pdf_icon

75339P

HUF75339G3, HUF75339P3, HUF75339S3S Data Sheet December 2001 75A, 55V, 0.012 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models

 0.2. Size:803K  onsemi
 huf75339p3.pdf pdf_icon

75339P

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:226K  fairchild semi
 hufa75339g3 hufa75339s3s hufa75339s3st.pdf pdf_icon

75339P

HUFA75339G3, HUFA75339P3, HUFA75339S3S Data Sheet December 2001 75A, 55V, 0.012 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models

 9.2. Size:258K  inchange semiconductor
 hufa75339g3.pdf pdf_icon

75339P

Isc N-Channel MOSFET Transistor HUFA75339G3 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... 75321S, 75329G, 75329P, 75329S, 75333G, 75333P, 75333S, 75339G, IRF640, 75339S, 7N50A, A498, ALD1101APA, ALD1101BPA, ALD1101DA, ALD1101MA, APT1001R1AN