PHB45NQ10T Todos los transistores

 ..1. Size:110K  philips
 phb45nq10t php45nq10t phw45nq10t 1.pdf

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHB45NQ10T, PHP45NQ10T PHW45NQ10T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 47 A g RDS(ON) 25 m s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor

 ..2. Size:860K  nxp
 phb45nq10t.pdf

PHB45NQ10T N-channel TrenchMOS standard level FET Rev. 02 8 July 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Featur

 6.1. Size:186K  philips
 phb45nq15t.pdf

PHB45NQ15T N-channel TrenchMOS standard level FET Rev. 02 2 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Fe

 6.2. Size:685K  nxp
 phb45nq15t.pdf

PHB45NQ15T N-channel TrenchMOS standard level FET Rev. 02 2 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Fe

 8.1. Size:89K  philips
 php45n03lt phb45n03lt phd45n03lt.pdf

Philips Semiconductors Product specification TrenchMOS transistor PHP45N03LT, PHB45N03LT, PHD45N03LT Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 30 V Very low on-state resistance Fast switching ID = 45 A Stable off-state characteristics High thermal cycling performance RDS(ON) 24 m (VGS = 5 V) g Low thermal

 8.2. Size:113K  philips
 php45n03lta phb45n03lta phd45n03lta.pdf

PHP/PHB/PHD45N03LTA N-channel enhancement mode field-effect transistor Rev. 02 02 November 2001 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability PHP45N03LTA in SOT78 (TO-220AB) PHB45N03LTA in SOT404 (D2-PAK) PHD45N03LTA in SOT428 (D-PAK). 2. Features Low on-state resistance

 8.3. Size:53K  philips
 phb45n03t 1.pdf

Philips Semiconductors Product specification TrenchMOS transistor PHB45N03T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic suitable for VDS Drain-source voltage 30 V surface mounting envelope using ID Drain current (DC) 45 A trench technology. The devic

 8.4. Size:49K  philips
 phb45n03lt.pdf

Philips Semiconductors Product specification TrenchMOS transistor PHB45N03LT Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 30 V Very low on-state resistance Fast switching ID = 45 A Stable off-state characteristics High thermal cycling performance RDS(ON) 24 m (VGS = 5 V) g Low thermal resistance Surface