Справочник MOSFET. PHB45NQ10T

 

PHB45NQ10T Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: PHB45NQ10T
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 150 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 47 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.025 Ohm
   Тип корпуса: D2PAK
 

 Аналог (замена) для PHB45NQ10T

   - подбор ⓘ MOSFET транзистора по параметрам

 

PHB45NQ10T Datasheet (PDF)

 ..1. Size:110K  philips
phb45nq10t php45nq10t phw45nq10t 1.pdfpdf_icon

PHB45NQ10T

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHB45NQ10T, PHP45NQ10T PHW45NQ10T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 47 AgRDS(ON) 25 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor

 ..2. Size:860K  nxp
phb45nq10t.pdfpdf_icon

PHB45NQ10T

PHB45NQ10TN-channel TrenchMOS standard level FETRev. 02 8 July 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Featur

 6.1. Size:186K  philips
phb45nq15t.pdfpdf_icon

PHB45NQ10T

PHB45NQ15TN-channel TrenchMOS standard level FETRev. 02 2 February 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Fe

 6.2. Size:685K  nxp
phb45nq15t.pdfpdf_icon

PHB45NQ10T

PHB45NQ15TN-channel TrenchMOS standard level FETRev. 02 2 February 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Fe

Другие MOSFET... PHB18NQ10T , PHB191NQ06LT , PHB20N06T , PHB20NQ20T , PHB27NQ10T , PHB29N08T , PHB32N06LT , PHB33NQ20T , AON7506 , PHB45NQ15T , PHB47NQ10T , PHB66NQ03LT , PHC21025 , PHC2300 , PHD101NQ03LT , PHD20N06T , PHD38N02LT .

History: IXFR12N100F | APT20M16LFLLG | YTF250 | IPS12CN10LG | 2SJ189 | TPCA8049-H | KI1563EDH

 

 
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