PHB45NQ10T
MOSFET. Datasheet pdf. Equivalent
Type Designator: PHB45NQ10T
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 150
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 47
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 61
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025
Ohm
Package:
D2PAK
PHB45NQ10T
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHB45NQ10T
Datasheet (PDF)
..1. Size:110K philips
phb45nq10t php45nq10t phw45nq10t 1.pdf 
Philips Semiconductors Product specification N-channel TrenchMOS transistor PHB45NQ10T, PHP45NQ10T PHW45NQ10T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 47 AgRDS(ON) 25 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor
..2. Size:860K nxp
phb45nq10t.pdf
PHB45NQ10TN-channel TrenchMOS standard level FETRev. 02 8 July 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Featur
6.1. Size:186K philips
phb45nq15t.pdf
PHB45NQ15TN-channel TrenchMOS standard level FETRev. 02 2 February 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Fe
6.2. Size:685K nxp
phb45nq15t.pdf
PHB45NQ15TN-channel TrenchMOS standard level FETRev. 02 2 February 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Fe
8.1. Size:89K philips
php45n03lt phb45n03lt phd45n03lt.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHP45N03LT, PHB45N03LT, PHD45N03LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 30 V Very low on-state resistance Fast switching ID = 45 A Stable off-state characteristics High thermal cycling performance RDS(ON) 24 m (VGS = 5 V)g Low thermal
8.2. Size:113K philips
php45n03lta phb45n03lta phd45n03lta.pdf
PHP/PHB/PHD45N03LTAN-channel enhancement mode field-effect transistorRev. 02 02 November 2001 Product data1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHP45N03LTA in SOT78 (TO-220AB)PHB45N03LTA in SOT404 (D2-PAK)PHD45N03LTA in SOT428 (D-PAK).2. Features Low on-state resistance
8.3. Size:53K philips
phb45n03t 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHB45N03T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic suitable for VDS Drain-source voltage 30 Vsurface mounting envelope using ID Drain current (DC) 45 Atrench technology. The devic
8.4. Size:49K philips
phb45n03lt.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHB45N03LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 30 V Very low on-state resistance Fast switching ID = 45 A Stable off-state characteristics High thermal cycling performance RDS(ON) 24 m (VGS = 5 V)g Low thermal resistance Surface
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