PHKD3NQ10T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PHKD3NQ10T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm

Encapsulados: SO8

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PHKD3NQ10T datasheet

 ..1. Size:173K  philips
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PHKD3NQ10T

PHKD3NQ10T Dual N-channel TrenchMOS standard level FET Rev. 02 16 December 2010 Product data sheet 1. Product profile 1.1 General description Dual standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications on

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PHKD3NQ10T

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

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