PHKD3NQ10T - Даташиты. Аналоги. Основные параметры
Наименование производителя: PHKD3NQ10T
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 3 A
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.09 Ohm
Тип корпуса: SO8
Аналог (замена) для PHKD3NQ10T
PHKD3NQ10T Datasheet (PDF)
phkd3nq10t.pdf

PHKD3NQ10TDual N-channel TrenchMOS standard level FETRev. 02 16 December 2010 Product data sheet1. Product profile1.1 General descriptionDual standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications on
phkd3nq10t.pdf

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
Другие MOSFET... PHK12NQ03LT , PHK12NQ10T , PHK13N03LT , PHK18NQ03LT , PHK28NQ03LT , PHK31NQ03LT , PHK5NQ15T , PHKD13N03LT , 2N60 , PHKD6N02LT , PHN203 , PHN210T , PHP18NQ10T , PHP18NQ11T , PHP191NQ06LT , PHP20N06T , PHP20NQ20T .
History: SM6A24NSFP | 2SK1740
History: SM6A24NSFP | 2SK1740



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