Справочник MOSFET. PHKD3NQ10T

 

PHKD3NQ10T Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: PHKD3NQ10T
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3 A
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.09 Ohm
   Тип корпуса: SO8
     - подбор MOSFET транзистора по параметрам

 

PHKD3NQ10T Datasheet (PDF)

 ..1. Size:173K  philips
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PHKD3NQ10T

PHKD3NQ10TDual N-channel TrenchMOS standard level FETRev. 02 16 December 2010 Product data sheet1. Product profile1.1 General descriptionDual standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications on

 ..2. Size:291K  nxp
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PHKD3NQ10T

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: MS4N65 | AP2306CGN-HF | FDI33N25 | SDF9N100JED-S | FDPF51N25RDTU | MSFA0M02X8 | MRF5007

 

 
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