PHKD3NQ10T
MOSFET. Datasheet pdf. Equivalent
Type Designator: PHKD3NQ10T
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 6
V
|Id|ⓘ - Maximum Drain Current: 3
A
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09
Ohm
Package:
SO8
PHKD3NQ10T
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHKD3NQ10T
Datasheet (PDF)
..1. Size:173K philips
phkd3nq10t.pdf
PHKD3NQ10TDual N-channel TrenchMOS standard level FETRev. 02 16 December 2010 Product data sheet1. Product profile1.1 General descriptionDual standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications on
..2. Size:291K nxp
phkd3nq10t.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
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