PHKD3NQ10T Specs and Replacement

Type Designator: PHKD3NQ10T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Id| ⓘ - Maximum Drain Current: 3 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: SO8

PHKD3NQ10T substitution

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PHKD3NQ10T datasheet

 ..1. Size:173K  philips
 phkd3nq10t.pdf pdf_icon

PHKD3NQ10T

PHKD3NQ10T Dual N-channel TrenchMOS standard level FET Rev. 02 16 December 2010 Product data sheet 1. Product profile 1.1 General description Dual standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications on... See More ⇒

 ..2. Size:291K  nxp
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PHKD3NQ10T

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒

Detailed specifications: PHK12NQ03LT, PHK12NQ10T, PHK13N03LT, PHK18NQ03LT, PHK28NQ03LT, PHK31NQ03LT, PHK5NQ15T, PHKD13N03LT, 20N50, PHKD6N02LT, PHN203, PHN210T, PHP18NQ10T, PHP18NQ11T, PHP191NQ06LT, PHP20N06T, PHP20NQ20T

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