All MOSFET. PHKD3NQ10T Datasheet

 

PHKD3NQ10T Datasheet and Replacement


   Type Designator: PHKD3NQ10T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: SO8
 

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PHKD3NQ10T Datasheet (PDF)

 ..1. Size:173K  philips
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PHKD3NQ10T

PHKD3NQ10TDual N-channel TrenchMOS standard level FETRev. 02 16 December 2010 Product data sheet1. Product profile1.1 General descriptionDual standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications on

 ..2. Size:291K  nxp
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PHKD3NQ10T

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Datasheet: PHK12NQ03LT , PHK12NQ10T , PHK13N03LT , PHK18NQ03LT , PHK28NQ03LT , PHK31NQ03LT , PHK5NQ15T , PHKD13N03LT , 2N60 , PHKD6N02LT , PHN203 , PHN210T , PHP18NQ10T , PHP18NQ11T , PHP191NQ06LT , PHP20N06T , PHP20NQ20T .

History: CTLM8110-M832D | HSS2306A

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