PHP18NQ11T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PHP18NQ11T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 79 W
Voltaje máximo drenador - fuente |Vds|: 110 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 18 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 21 nC
Resistencia entre drenaje y fuente RDS(on): 0.09 Ohm
Paquete / Cubierta: TO220AB
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PHP18NQ11T Datasheet (PDF)
php18nq11t.pdf
PHP18NQ11TN-channel TrenchMOS standard level FETRev. 02 10 March 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Feat
php18nq11t.pdf
PHP18NQ11TN-channel TrenchMOS standard level FETRev. 02 10 March 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Feat
php18nq11t.pdf
isc N-Channel MOSFET Transistor PHP18NQ11TDESCRIPTIONDrain Current I = 18A@ T =25D CDrain Source Voltage-: V = 110V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PARAMETER VALUE
phb18nq10t phd18nq10t php18nq10t phd18nq10t.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP18NQ10T, PHB18NQ10T PHD18NQ10TFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 18 AgRDS(ON) 90 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in a
php18nq10t.pdf
PHP18NQ10TN-channel TrenchMOS standard level FETRev. 02 16 December 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 F
phb18nq20t php18nq20t 1.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP18NQ20T, PHB18NQ20T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 16 AgRDS(ON) 180 msGENERAL DESCRIPTIONN-channel, enhancement mode field-effect power transistor using Trench te
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