PHP18NQ11T Todos los transistores

 ..1. Size:205K  philips
 php18nq11t.pdf

PHP18NQ11T N-channel TrenchMOS standard level FET Rev. 02 10 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Feat

 ..2. Size:762K  nxp
 php18nq11t.pdf

PHP18NQ11T N-channel TrenchMOS standard level FET Rev. 02 10 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Feat

 ..3. Size:260K  inchange semiconductor
 php18nq11t.pdf

isc N-Channel MOSFET Transistor PHP18NQ11T DESCRIPTION Drain Current I = 18A@ T =25 D C Drain Source Voltage- V = 110V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL PARAMETER VALUE

 6.1. Size:121K  philips
 phb18nq10t phd18nq10t php18nq10t phd18nq10t.pdf

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP18NQ10T, PHB18NQ10T PHD18NQ10T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 18 A g RDS(ON) 90 m s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

 6.2. Size:777K  nxp
 php18nq10t.pdf

PHP18NQ10T N-channel TrenchMOS standard level FET Rev. 02 16 December 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 F

 7.1. Size:98K  philips
 phb18nq20t php18nq20t 1.pdf

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP18NQ20T, PHB18NQ20T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 16 A g RDS(ON) 180 m s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench te