PHP18NQ11T Specs and Replacement
Type Designator: PHP18NQ11T
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 79 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 110 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: TO220AB
PHP18NQ11T substitution
- MOSFET ⓘ Cross-Reference Search
PHP18NQ11T datasheet
php18nq11t.pdf
PHP18NQ11T N-channel TrenchMOS standard level FET Rev. 02 10 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Feat... See More ⇒
php18nq11t.pdf
PHP18NQ11T N-channel TrenchMOS standard level FET Rev. 02 10 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Feat... See More ⇒
php18nq11t.pdf
isc N-Channel MOSFET Transistor PHP18NQ11T DESCRIPTION Drain Current I = 18A@ T =25 D C Drain Source Voltage- V = 110V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL PARAMETER VALUE ... See More ⇒
phb18nq10t phd18nq10t php18nq10t phd18nq10t.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP18NQ10T, PHB18NQ10T PHD18NQ10T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 18 A g RDS(ON) 90 m s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a ... See More ⇒
Detailed specifications: PHK31NQ03LT, PHK5NQ15T, PHKD13N03LT, PHKD3NQ10T, PHKD6N02LT, PHN203, PHN210T, PHP18NQ10T, 2N60, PHP191NQ06LT, PHP20N06T, PHP20NQ20T, PHP225, PHP23NQ11T, PHP27NQ11T, PHP28NQ15T, PHP29N08T
Keywords - PHP18NQ11T MOSFET specs
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