PHP18NQ11T Specs and Replacement

Type Designator: PHP18NQ11T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 79 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 110 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: TO220AB

PHP18NQ11T substitution

- MOSFET ⓘ Cross-Reference Search

 

PHP18NQ11T datasheet

 ..1. Size:205K  philips
php18nq11t.pdf pdf_icon

PHP18NQ11T

PHP18NQ11T N-channel TrenchMOS standard level FET Rev. 02 10 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Feat... See More ⇒

 ..2. Size:762K  nxp
php18nq11t.pdf pdf_icon

PHP18NQ11T

PHP18NQ11T N-channel TrenchMOS standard level FET Rev. 02 10 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Feat... See More ⇒

 ..3. Size:260K  inchange semiconductor
php18nq11t.pdf pdf_icon

PHP18NQ11T

isc N-Channel MOSFET Transistor PHP18NQ11T DESCRIPTION Drain Current I = 18A@ T =25 D C Drain Source Voltage- V = 110V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL PARAMETER VALUE ... See More ⇒

 6.1. Size:121K  philips
phb18nq10t phd18nq10t php18nq10t phd18nq10t.pdf pdf_icon

PHP18NQ11T

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP18NQ10T, PHB18NQ10T PHD18NQ10T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 18 A g RDS(ON) 90 m s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a ... See More ⇒

Detailed specifications: PHK31NQ03LT, PHK5NQ15T, PHKD13N03LT, PHKD3NQ10T, PHKD6N02LT, PHN203, PHN210T, PHP18NQ10T, 2N60, PHP191NQ06LT, PHP20N06T, PHP20NQ20T, PHP225, PHP23NQ11T, PHP27NQ11T, PHP28NQ15T, PHP29N08T

Keywords - PHP18NQ11T MOSFET specs

 PHP18NQ11T cross reference

 PHP18NQ11T equivalent finder

 PHP18NQ11T pdf lookup

 PHP18NQ11T substitution

 PHP18NQ11T replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility