All MOSFET. PHP18NQ11T Datasheet

 

PHP18NQ11T MOSFET. Datasheet pdf. Equivalent


   Type Designator: PHP18NQ11T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 79 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 110 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 21 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TO220AB

 PHP18NQ11T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PHP18NQ11T Datasheet (PDF)

 ..1. Size:205K  philips
 php18nq11t.pdf

PHP18NQ11T PHP18NQ11T

PHP18NQ11TN-channel TrenchMOS standard level FETRev. 02 10 March 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Feat

 ..2. Size:762K  nxp
 php18nq11t.pdf

PHP18NQ11T PHP18NQ11T

PHP18NQ11TN-channel TrenchMOS standard level FETRev. 02 10 March 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Feat

 ..3. Size:260K  inchange semiconductor
 php18nq11t.pdf

PHP18NQ11T PHP18NQ11T

isc N-Channel MOSFET Transistor PHP18NQ11TDESCRIPTIONDrain Current I = 18A@ T =25D CDrain Source Voltage-: V = 110V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PARAMETER VALUE

 6.1. Size:121K  philips
 phb18nq10t phd18nq10t php18nq10t phd18nq10t.pdf

PHP18NQ11T PHP18NQ11T

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP18NQ10T, PHB18NQ10T PHD18NQ10TFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 18 AgRDS(ON) 90 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in a

 6.2. Size:777K  nxp
 php18nq10t.pdf

PHP18NQ11T PHP18NQ11T

PHP18NQ10TN-channel TrenchMOS standard level FETRev. 02 16 December 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 F

 7.1. Size:98K  philips
 phb18nq20t php18nq20t 1.pdf

PHP18NQ11T PHP18NQ11T

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP18NQ20T, PHB18NQ20T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 16 AgRDS(ON) 180 msGENERAL DESCRIPTIONN-channel, enhancement mode field-effect power transistor using Trench te

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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