PHP20N06T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PHP20N06T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 62 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 20.3 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm
Encapsulados: TO220AB
Búsqueda de reemplazo de PHP20N06T MOSFET
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PHP20N06T datasheet
php20n06t phb20n06t.pdf
PHP20N06T; PHB20N06T N-channel TrenchMOS transistor Rev. 01 22 February 2001 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability PHP20N06T in SOT78 (TO-220AB) PHB20N06T in SOT404 (D 2-PAK). 2. Features Very low on-state resistance Fast switching. 3. Applications
php20n06t.pdf
PHP20N06T N-channel TrenchMOS standard level FET Rev. 02 27 November 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Fe
php20n06e 1.pdf
Philips Semiconductors Product specification PowerMOS transistor PHP20N06E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 22 A Switched Mode Power Supplies Ptot Total power dissipation 75 W (SMPS), mo
phb20nq20t php20nq20t.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP20NQ20T, PHB20NQ20T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 20 A g RDS(ON) 130 m s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plasti
Otros transistores... PHKD13N03LT, PHKD3NQ10T, PHKD6N02LT, PHN203, PHN210T, PHP18NQ10T, PHP18NQ11T, PHP191NQ06LT, P60NF06, PHP20NQ20T, PHP225, PHP23NQ11T, PHP27NQ11T, PHP28NQ15T, PHP29N08T, PHP30NQ15T, PHP33NQ20T
History: PHP23NQ11T
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