PHP20N06T PDF and Equivalents Search

 

PHP20N06T Specs and Replacement

Type Designator: PHP20N06T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20.3 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm

Package: TO220AB

PHP20N06T substitution

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PHP20N06T datasheet

 ..1. Size:334K  philips
php20n06t phb20n06t.pdf pdf_icon

PHP20N06T

PHP20N06T; PHB20N06T N-channel TrenchMOS transistor Rev. 01 22 February 2001 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability PHP20N06T in SOT78 (TO-220AB) PHB20N06T in SOT404 (D 2-PAK). 2. Features Very low on-state resistance Fast switching. 3. Applications ... See More ⇒

 ..2. Size:854K  nxp
php20n06t.pdf pdf_icon

PHP20N06T

PHP20N06T N-channel TrenchMOS standard level FET Rev. 02 27 November 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Fe... See More ⇒

 6.1. Size:54K  philips
php20n06e 1.pdf pdf_icon

PHP20N06T

Philips Semiconductors Product specification PowerMOS transistor PHP20N06E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 22 A Switched Mode Power Supplies Ptot Total power dissipation 75 W (SMPS), mo... See More ⇒

 8.1. Size:105K  philips
phb20nq20t php20nq20t.pdf pdf_icon

PHP20N06T

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP20NQ20T, PHB20NQ20T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 20 A g RDS(ON) 130 m s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plasti... See More ⇒

Detailed specifications: PHKD13N03LT , PHKD3NQ10T , PHKD6N02LT , PHN203 , PHN210T , PHP18NQ10T , PHP18NQ11T , PHP191NQ06LT , P60NF06 , PHP20NQ20T , PHP225 , PHP23NQ11T , PHP27NQ11T , PHP28NQ15T , PHP29N08T , PHP30NQ15T , PHP33NQ20T .

History: GSM7923WS

Keywords - PHP20N06T MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 


 
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