PHP20N06T. Аналоги и основные параметры

Наименование производителя: PHP20N06T

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 62 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 55 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 20.3 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.075 Ohm

Тип корпуса: TO220AB

Аналог (замена) для PHP20N06T

- подборⓘ MOSFET транзистора по параметрам

 

PHP20N06T даташит

 ..1. Size:334K  philips
php20n06t phb20n06t.pdfpdf_icon

PHP20N06T

PHP20N06T; PHB20N06T N-channel TrenchMOS transistor Rev. 01 22 February 2001 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability PHP20N06T in SOT78 (TO-220AB) PHB20N06T in SOT404 (D 2-PAK). 2. Features Very low on-state resistance Fast switching. 3. Applications

 ..2. Size:854K  nxp
php20n06t.pdfpdf_icon

PHP20N06T

PHP20N06T N-channel TrenchMOS standard level FET Rev. 02 27 November 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Fe

 6.1. Size:54K  philips
php20n06e 1.pdfpdf_icon

PHP20N06T

Philips Semiconductors Product specification PowerMOS transistor PHP20N06E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 22 A Switched Mode Power Supplies Ptot Total power dissipation 75 W (SMPS), mo

 8.1. Size:105K  philips
phb20nq20t php20nq20t.pdfpdf_icon

PHP20N06T

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP20NQ20T, PHB20NQ20T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 20 A g RDS(ON) 130 m s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plasti

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