PHP45NQ11T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PHP45NQ11T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 105 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 47 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm

Encapsulados: TO220AB

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PHP45NQ11T datasheet

 ..1. Size:355K  philips
 php45nq11t.pdf pdf_icon

PHP45NQ11T

PHP45NQ11T N-channel TrenchMOS standard level FET Rev. 02 19 November 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 F

 6.1. Size:110K  philips
 phb45nq10t php45nq10t phw45nq10t 1.pdf pdf_icon

PHP45NQ11T

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHB45NQ10T, PHP45NQ10T PHW45NQ10T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 47 A g RDS(ON) 25 m s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor

 6.2. Size:85K  philips
 php45nq15t.pdf pdf_icon

PHP45NQ11T

PHP/PHB45NQ15T N-channel TrenchMOS standard level FET Rev. 01 8 November 2004 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Low on-state resistance Fast switching Low thermal resistance Low gate charge. 1.3 Applications DC-to-DC

 6.3. Size:859K  nxp
 php45nq10t.pdf pdf_icon

PHP45NQ11T

PHP45NQ10T N-channel TrenchMOS standard level FET Rev. 02 8 July 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Featur

MOSTRAR MÁS

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