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PHP45NQ11T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PHP45NQ11T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 150 W
   Voltaje máximo drenador - fuente |Vds|: 105 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 47 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 60 nC
   Resistencia entre drenaje y fuente RDS(on): 0.025 Ohm
   Paquete / Cubierta: TO220AB

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PHP45NQ11T Datasheet (PDF)

 ..1. Size:355K  philips
php45nq11t.pdf

PHP45NQ11T PHP45NQ11T

PHP45NQ11TN-channel TrenchMOS standard level FETRev. 02 19 November 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 F

 6.1. Size:110K  philips
phb45nq10t php45nq10t phw45nq10t 1.pdf

PHP45NQ11T PHP45NQ11T

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHB45NQ10T, PHP45NQ10T PHW45NQ10T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 47 AgRDS(ON) 25 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor

 6.2. Size:85K  philips
php45nq15t.pdf

PHP45NQ11T PHP45NQ11T

PHP/PHB45NQ15TN-channel TrenchMOS standard level FETRev. 01 8 November 2004 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode field effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Low on-state resistance Fast switching Low thermal resistance Low gate charge.1.3 Applications DC-to-DC

 6.3. Size:859K  nxp
php45nq10t.pdf

PHP45NQ11T PHP45NQ11T

PHP45NQ10TN-channel TrenchMOS standard level FETRev. 02 8 July 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Featur

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