PHP45NQ11T Specs and Replacement

Type Designator: PHP45NQ11T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 105 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 47 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: TO220AB

PHP45NQ11T substitution

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PHP45NQ11T datasheet

 ..1. Size:355K  philips
 php45nq11t.pdf pdf_icon

PHP45NQ11T

PHP45NQ11T N-channel TrenchMOS standard level FET Rev. 02 19 November 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 F... See More ⇒

 6.1. Size:110K  philips
 phb45nq10t php45nq10t phw45nq10t 1.pdf pdf_icon

PHP45NQ11T

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHB45NQ10T, PHP45NQ10T PHW45NQ10T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 47 A g RDS(ON) 25 m s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor... See More ⇒

 6.2. Size:85K  philips
 php45nq15t.pdf pdf_icon

PHP45NQ11T

PHP/PHB45NQ15T N-channel TrenchMOS standard level FET Rev. 01 8 November 2004 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Low on-state resistance Fast switching Low thermal resistance Low gate charge. 1.3 Applications DC-to-DC ... See More ⇒

 6.3. Size:859K  nxp
 php45nq10t.pdf pdf_icon

PHP45NQ11T

PHP45NQ10T N-channel TrenchMOS standard level FET Rev. 02 8 July 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Featur... See More ⇒

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Detailed specifications: PHP225, PHP23NQ11T, PHP27NQ11T, PHP28NQ15T, PHP29N08T, PHP30NQ15T, PHP33NQ20T, PHP45NQ10T, IRLB3034, PHP79NQ08LT, PHP9NQ20T, PHT4NQ10LT, PHT4NQ10T, PHT6N06T, PHT6NQ10T, PHU97NQ03LT, PMBF170

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