PMGD290XN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PMGD290XN

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.41 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.86 A

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.35 Ohm

Encapsulados: TSSOP6

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PMGD290XN datasheet

 ..1. Size:96K  philips
pmgd290xn.pdf pdf_icon

PMGD290XN

PMGD290XN Dual N-channel TrenchMOS extremely low level FET Rev. 01 26 February 2004 Product data MBD128 1. Product profile 1.1 Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Surface mounted package Footprint 40% smaller than SOT23 Dual device Fast switching Low on-state resistance Low th

 ..2. Size:209K  nxp
pmgd290xn.pdf pdf_icon

PMGD290XN

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 ..3. Size:1469K  cn vbsemi
pmgd290xn.pdf pdf_icon

PMGD290XN

PMGD290XN www.VBsemi.tw Dual N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET 0.086 at VGS = 4.5 V 2.6a 100 % Rg Tested 20 0.110 at VGS = 2.5 V 2.5a 5.0 nC Typical ESD Protection 2100 V HBM a 0.180 at VGS = 1.8 V 2.3 Compliant to RoHS Directiv

 7.1. Size:357K  nxp
pmgd290ucea.pdf pdf_icon

PMGD290XN

PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 28 March 2014 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Trench MOSFET technology 2 kV ESD prote

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