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PMGD290XN Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: PMGD290XN
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.41 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.86 A
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.35 Ohm
   Тип корпуса: TSSOP6
     - подбор MOSFET транзистора по параметрам

 

PMGD290XN Datasheet (PDF)

 ..1. Size:96K  philips
pmgd290xn.pdfpdf_icon

PMGD290XN

PMGD290XNDual N-channel TrenchMOS extremely low level FETRev. 01 26 February 2004 Product dataMBD1281. Product profile1.1 DescriptionDual N-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features Surface mounted package Footprint 40% smaller than SOT23 Dual device Fast switching Low on-state resistance Low th

 ..2. Size:209K  nxp
pmgd290xn.pdfpdf_icon

PMGD290XN

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 ..3. Size:1469K  cn vbsemi
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PMGD290XN

PMGD290XNwww.VBsemi.twDual N-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET0.086 at VGS = 4.5 V 2.6a 100 % Rg Tested20 0.110 at VGS = 2.5 V 2.5a 5.0 nC Typical ESD Protection 2100 V HBMa0.180 at VGS = 1.8 V 2.3 Compliant to RoHS Directiv

 7.1. Size:357K  nxp
pmgd290ucea.pdfpdf_icon

PMGD290XN

PMGD290UCEA20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET28 March 2014 Product data sheet1. General descriptionComplementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a verysmall SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Very fast switching Trench MOSFET technology 2 kV ESD prote

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: CS4N65A3TDY | STB12NM50ND | MS65R600F | QM3010D | IRF510STRRPBF | SQD50N30-4M0L | TMD5N40ZG

 

 
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