PMGD290XN
MOSFET. Datasheet pdf. Equivalent
Type Designator: PMGD290XN
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.41
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 0.86
A
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35
Ohm
Package: TSSOP6
PMGD290XN
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMGD290XN
Datasheet (PDF)
..1. Size:96K philips
pmgd290xn.pdf
PMGD290XNDual N-channel TrenchMOS extremely low level FETRev. 01 26 February 2004 Product dataMBD1281. Product profile1.1 DescriptionDual N-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features Surface mounted package Footprint 40% smaller than SOT23 Dual device Fast switching Low on-state resistance Low th
..2. Size:209K nxp
pmgd290xn.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
..3. Size:1469K cn vbsemi
pmgd290xn.pdf
PMGD290XNwww.VBsemi.twDual N-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET0.086 at VGS = 4.5 V 2.6a 100 % Rg Tested20 0.110 at VGS = 2.5 V 2.5a 5.0 nC Typical ESD Protection 2100 V HBMa0.180 at VGS = 1.8 V 2.3 Compliant to RoHS Directiv
7.1. Size:357K nxp
pmgd290ucea.pdf
PMGD290UCEA20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET28 March 2014 Product data sheet1. General descriptionComplementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a verysmall SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Very fast switching Trench MOSFET technology 2 kV ESD prote
9.1. Size:94K philips
pmgd280un.pdf
PMGD280UNDual N-channel TrenchMOS ultra low level FETRev. 01 10 February 2004 Product dataMBD1281. Product profile1.1 DescriptionDual N-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features Surface mounted package Footprint 40% smaller than SOT23 Dual device Fast switching Low on-state resistance Low thresh
9.2. Size:207K nxp
pmgd280un.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
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