All MOSFET. PMGD290XN Datasheet

 

PMGD290XN MOSFET. Datasheet pdf. Equivalent


   Type Designator: PMGD290XN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.41 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 0.86 A
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: TSSOP6

 PMGD290XN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PMGD290XN Datasheet (PDF)

 ..1. Size:96K  philips
pmgd290xn.pdf

PMGD290XN
PMGD290XN

PMGD290XNDual N-channel TrenchMOS extremely low level FETRev. 01 26 February 2004 Product dataMBD1281. Product profile1.1 DescriptionDual N-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features Surface mounted package Footprint 40% smaller than SOT23 Dual device Fast switching Low on-state resistance Low th

 ..2. Size:209K  nxp
pmgd290xn.pdf

PMGD290XN
PMGD290XN

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 ..3. Size:1469K  cn vbsemi
pmgd290xn.pdf

PMGD290XN
PMGD290XN

PMGD290XNwww.VBsemi.twDual N-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET0.086 at VGS = 4.5 V 2.6a 100 % Rg Tested20 0.110 at VGS = 2.5 V 2.5a 5.0 nC Typical ESD Protection 2100 V HBMa0.180 at VGS = 1.8 V 2.3 Compliant to RoHS Directiv

 7.1. Size:357K  nxp
pmgd290ucea.pdf

PMGD290XN
PMGD290XN

PMGD290UCEA20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET28 March 2014 Product data sheet1. General descriptionComplementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a verysmall SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Very fast switching Trench MOSFET technology 2 kV ESD prote

 9.1. Size:94K  philips
pmgd280un.pdf

PMGD290XN
PMGD290XN

PMGD280UNDual N-channel TrenchMOS ultra low level FETRev. 01 10 February 2004 Product dataMBD1281. Product profile1.1 DescriptionDual N-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features Surface mounted package Footprint 40% smaller than SOT23 Dual device Fast switching Low on-state resistance Low thresh

 9.2. Size:207K  nxp
pmgd280un.pdf

PMGD290XN
PMGD290XN

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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