PMGD290XN Specs and Replacement

Type Designator: PMGD290XN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.41 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.86 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm

Package: TSSOP6

PMGD290XN substitution

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PMGD290XN datasheet

 ..1. Size:96K  philips
pmgd290xn.pdf pdf_icon

PMGD290XN

PMGD290XN Dual N-channel TrenchMOS extremely low level FET Rev. 01 26 February 2004 Product data MBD128 1. Product profile 1.1 Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Surface mounted package Footprint 40% smaller than SOT23 Dual device Fast switching Low on-state resistance Low th... See More ⇒

 ..2. Size:209K  nxp
pmgd290xn.pdf pdf_icon

PMGD290XN

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒

 ..3. Size:1469K  cn vbsemi
pmgd290xn.pdf pdf_icon

PMGD290XN

PMGD290XN www.VBsemi.tw Dual N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET 0.086 at VGS = 4.5 V 2.6a 100 % Rg Tested 20 0.110 at VGS = 2.5 V 2.5a 5.0 nC Typical ESD Protection 2100 V HBM a 0.180 at VGS = 1.8 V 2.3 Compliant to RoHS Directiv... See More ⇒

 7.1. Size:357K  nxp
pmgd290ucea.pdf pdf_icon

PMGD290XN

PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 28 March 2014 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Trench MOSFET technology 2 kV ESD prote... See More ⇒

Detailed specifications: PMF3800SN, PMF400UN, PMF780SN, PMFPB6532UP, PMFPB6545UP, PMG370XN, PMG85XP, PMGD280UN, IRFP460, PMGD370XN, PMGD400UN, PMGD780SN, PMGD8000LN, PMK30EP, PMK35EP, PMK50XP, PML260SN

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.