PMGD780SN Todos los transistores

 

PMGD780SN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMGD780SN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.41 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Id|ⓘ - Corriente continua de drenaje: 0.49 A

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.92 Ohm
   Paquete / Cubierta: TSSOP6
 

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PMGD780SN Datasheet (PDF)

 ..1. Size:216K  philips
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PMGD780SN

PMGD780SNDual N-channel TrenchMOS standard level FETRev. 02 19 April 2010 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode field-effect transistor in a small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.1.2 Features and benefits Surface-mounted package Footprint 40 % smaller than SOT23 S

 ..2. Size:333K  nxp
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PMGD780SN

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

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