PMGD780SN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PMGD780SN

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.41 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Id|ⓘ - Corriente continua de drenaje: 0.49 A

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.92 Ohm

Encapsulados: TSSOP6

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PMGD780SN datasheet

 ..1. Size:216K  philips
 pmgd780sn.pdf pdf_icon

PMGD780SN

PMGD780SN Dual N-channel TrenchMOS standard level FET Rev. 02 19 April 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect transistor in a small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using TrenchMOS technology. 1.2 Features and benefits Surface-mounted package Footprint 40 % smaller than SOT23 S

 ..2. Size:333K  nxp
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PMGD780SN

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

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