PMGD780SN Specs and Replacement

Type Designator: PMGD780SN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.41 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Id| ⓘ - Maximum Drain Current: 0.49 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.92 Ohm

Package: TSSOP6

PMGD780SN substitution

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PMGD780SN datasheet

 ..1. Size:216K  philips
 pmgd780sn.pdf pdf_icon

PMGD780SN

PMGD780SN Dual N-channel TrenchMOS standard level FET Rev. 02 19 April 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect transistor in a small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using TrenchMOS technology. 1.2 Features and benefits Surface-mounted package Footprint 40 % smaller than SOT23 S... See More ⇒

 ..2. Size:333K  nxp
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PMGD780SN

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒

Detailed specifications: PMFPB6532UP, PMFPB6545UP, PMG370XN, PMG85XP, PMGD280UN, PMGD290XN, PMGD370XN, PMGD400UN, IRF1404, PMGD8000LN, PMK30EP, PMK35EP, PMK50XP, PML260SN, PML340SN, PMN20EN, PMN23UN

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.