Справочник MOSFET. PMGD780SN

 

PMGD780SN Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: PMGD780SN
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.41 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.49 A
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.92 Ohm
   Тип корпуса: TSSOP6
     - подбор MOSFET транзистора по параметрам

 

PMGD780SN Datasheet (PDF)

 ..1. Size:216K  philips
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PMGD780SN

PMGD780SNDual N-channel TrenchMOS standard level FETRev. 02 19 April 2010 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode field-effect transistor in a small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.1.2 Features and benefits Surface-mounted package Footprint 40 % smaller than SOT23 S

 ..2. Size:333K  nxp
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PMGD780SN

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TK32A12N1 | WMO10N70C4 | JCS90N10I | MEE7816S | 12N65KL-TQ | NCEP045N85GU | MS65R120C

 

 
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