PMGD780SN. Аналоги и основные параметры

Наименование производителя: PMGD780SN

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 0.41 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.49 A

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.92 Ohm

Тип корпуса: TSSOP6

Аналог (замена) для PMGD780SN

- подборⓘ MOSFET транзистора по параметрам

 

PMGD780SN даташит

 ..1. Size:216K  philips
 pmgd780sn.pdf pdf_icon

PMGD780SN

PMGD780SN Dual N-channel TrenchMOS standard level FET Rev. 02 19 April 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect transistor in a small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using TrenchMOS technology. 1.2 Features and benefits Surface-mounted package Footprint 40 % smaller than SOT23 S

 ..2. Size:333K  nxp
 pmgd780sn.pdf pdf_icon

PMGD780SN

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

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