PMV40UN MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PMV40UN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PMV40UN

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.9 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 4.9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.047 Ohm

Encapsulados: TO236AB

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PMV40UN datasheet

..1. Size:241K philips
pmv40un.pdf pdf_icon

PMV40UN TrenchMOS ultra low level FET Rev. 01 05 August 2003 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability PMV40UN in SOT23. 1.2 Features Ultra low level threshold Surface mount package. 1.3 Applications Battery management High-speed switch.

..2. Size:96K tysemi
pmv40un.pdf pdf_icon

Product specification PMV40UN TrenchMOS ultra low level FET Rev. 01 05 August 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability PMV40UN in SOT23. 1.2 Features Ultra low level threshold Surface mount package. 1.3 Applications Battery management Hig

..3. Size:848K cn vbsemi
pmv40un.pdf pdf_icon

PMV40UN www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G

0.1. Size:259K nxp
pmv40un2.pdf pdf_icon

PMV40UN2 30 V, N-channel Trench MOSFET 24 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissip

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