PMV40UN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PMV40UN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.9 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 4.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 0.7 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.047 Ohm
   Paquete / Cubierta: TO236AB

Búsqueda de reemplazo de MOSFET PMV40UN

PMV40UN Datasheet (PDF)

..1. Size:241K philips
pmv40un.pdf

PMV40UNTrenchMOS ultra low level FETRev. 01 05 August 2003 Product dataM3D0881. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PMV40UN in SOT23.1.2 Features Ultra low level threshold Surface mount package.1.3 Applications Battery management High-speed switch.

..2. Size:96K tysemi
pmv40un.pdf

Product specificationPMV40UNTrenchMOS ultra low level FETRev. 01 05 August 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PMV40UN in SOT23.1.2 Features Ultra low level threshold Surface mount package.1.3 Applications Battery management Hig

..3. Size:848K cn vbsemi
pmv40un.pdf

PMV40UNwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G

0.1. Size:259K nxp
pmv40un2.pdf

PMV40UN230 V, N-channel Trench MOSFET24 April 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissip

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SDF044JAA-U

Liste

Recientemente añadidas las descripciónes de los transistores: