PMV40UN Todos los transistores

 

PMV40UN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMV40UN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.9 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 4.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.047 Ohm
   Paquete / Cubierta: TO236AB
     - Selección de transistores por parámetros

 

PMV40UN Datasheet (PDF)

 ..1. Size:241K  philips
pmv40un.pdf pdf_icon

PMV40UN

PMV40UNTrenchMOS ultra low level FETRev. 01 05 August 2003 Product dataM3D0881. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PMV40UN in SOT23.1.2 Features Ultra low level threshold Surface mount package.1.3 Applications Battery management High-speed switch.

 ..2. Size:96K  tysemi
pmv40un.pdf pdf_icon

PMV40UN

Product specificationPMV40UNTrenchMOS ultra low level FETRev. 01 05 August 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PMV40UN in SOT23.1.2 Features Ultra low level threshold Surface mount package.1.3 Applications Battery management Hig

 ..3. Size:848K  cn vbsemi
pmv40un.pdf pdf_icon

PMV40UN

PMV40UNwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G

 0.1. Size:259K  nxp
pmv40un2.pdf pdf_icon

PMV40UN

PMV40UN230 V, N-channel Trench MOSFET24 April 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissip

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FK30SM-5 | SIHF10N40D | SI2202 | P3506DD | MTP3N35 | SL4813A

 

 
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