PMV40UN Specs and Replacement

Type Designator: PMV40UN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.047 Ohm

Package: TO236AB

PMV40UN substitution

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PMV40UN datasheet

 ..1. Size:241K  philips
 pmv40un.pdf pdf_icon

PMV40UN

PMV40UN TrenchMOS ultra low level FET Rev. 01 05 August 2003 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability PMV40UN in SOT23. 1.2 Features Ultra low level threshold Surface mount package. 1.3 Applications Battery management High-speed switch.... See More ⇒

 ..2. Size:96K  tysemi
 pmv40un.pdf pdf_icon

PMV40UN

Product specification PMV40UN TrenchMOS ultra low level FET Rev. 01 05 August 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability PMV40UN in SOT23. 1.2 Features Ultra low level threshold Surface mount package. 1.3 Applications Battery management Hig... See More ⇒

 ..3. Size:848K  cn vbsemi
 pmv40un.pdf pdf_icon

PMV40UN

PMV40UN www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G ... See More ⇒

 0.1. Size:259K  nxp
 pmv40un2.pdf pdf_icon

PMV40UN

PMV40UN2 30 V, N-channel Trench MOSFET 24 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissip... See More ⇒

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Detailed specifications: PMV213SN, PMV22EN, PMV28UN, PMV30UN, PMV30XN, PMV31XN, PMV32UP, PMV37EN, STP80NF70, PMV45EN, PMV48XP, PMV56XN, PMV60EN, PMV65XP, PMZ1000UN, PMZ250UN, PMZ270XN

Keywords - PMV40UN MOSFET specs

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