PSMN004-60B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PSMN004-60B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 230 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 168 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0036 Ohm
   Paquete / Cubierta: D2PAK

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PSMN004-60B Datasheet (PDF)

..1. Size:712K nxp
psmn004-60b.pdf

PSMN004-60BN-channel TrenchMOS SiliconMAX standard level FETRev. 02 15 December 2009 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial ap

6.1. Size:105K philips
psmn004-25b p 4.pdf

Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN004-25B, PSMN004-25PFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 75 A Low thermal resistanceRDS(ON) 4 m (VGS = 10 V)gRDS(ON) 5 m (VGS = 5 V)sGENERAL DESCRIPTIONSiliconMAX pr

6.2. Size:294K philips
psmn004-36b.pdf

PSMN004-36P/36BN-channel enhancement mode field-effect transistorRev. 01 19 November 2001 Product data1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS1 technology.Product availability:PSMN004-36P in SOT78 (TO-220AB)PSMN004-36B in SOT404 (D2-PAK).2. Features Very low on-state resistance Fast switching.3. Applicat

6.3. Size:96K philips
psmn004-55w.pdf

Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN004-55W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Very low on-state resistance Fast switching ID = 100 A Low thermal resistance Logic level compatible RDS(ON) 4.2 m (VGS = 10 V)gRDS(ON) 4.5 m (VGS = 5 V)sRDS(ON) 5

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